1
Mark R Hawkins, McDonald Robinson: Gas injectors for reaction chambers in CVD systems. Epsilon Technology, Cahill Sutton & Thomas, June 22, 1993: US05221556 (147 worldwide citation)

The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single water-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profi ...


2
McDonald Robinson, Richard C Westhoff, Charles E Hunt, Li Ling: Silicon-germanium-carbon compositions in selective etch processes. Lawrence Semiconductor Research Laboratory, Wilson Sonsini Goodrich & Rosati, May 25, 1999: US05906708 (91 worldwide citation)

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, t ...


3
McDonald Robinson, Albert E Ozias: Heating system for reaction chamber of chemical vapor deposition equipment. Epsilon Technology, Cahill Sutton & Thomas, June 6, 1989: US04836138 (85 worldwide citation)

A heating system for use in chemical vapor deposition equipment of the type wherein a reactant gas is directed in a horizontal flow for depositing materials on a substrate which is supported in a reaction chamber on a susceptor which is rotatably driven for rotating the substrate about an axis which ...


4
Richard Crabb, McDonald Robinson, Mark R Hawkins, Dennis L Goodwin, Armand P Ferro, Albert E Ozias, Wiebe B deBoer: Chemical vapor deposition system. Epsilon Technology, May 9, 1989: US04828224 (77 worldwide citation)

This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and subsequent ext ...


5
Dennis L Goodwin, Richard Crabb, McDonald Robinson, Armand P Ferro: Wafer handling system with Bernoulli pick-up. Epsilon Technology, Cahill Sutton & Thomas, January 14, 1992: US05080549 (76 worldwide citation)

Wafer handling apparatus operating under the Bernoulli principle to pick up, transport and deposit wafers, which apparatus includes a plate having a plurality of laterally oriented outlets and a central outlet for discharging gas in a pattern sufficient to develop a low pressure enviroment to pick u ...


6
George K Celler, McDonald Robinson: Process for producing dielectrically isolated silicon devices. AT&T Bell Laboratories, Bruce S Schneider, February 5, 1985: US04497683 (73 worldwide citation)

Dielectrically isolated semiconductor devices are producible through a relatively convenient fabrication procedure. In this fabrication procedure, a substrate having regions of single crystal silicon and regions of silicon oxide is employed. Such substrate is expeditiously produced by methods which ...


7
McDonald Robinson, Richard C Westhoff, Charles E Hunt, Li Ling, Ziv Atzmon: Silicon-germanium-carbon compositions and processes thereof. Lawrence Semiconductor Research Laboratory, The Regents of the University of California, The Arizona Board of Regents, Robert Moll, May 16, 2000: US06064081 (71 worldwide citation)

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, t ...


8
McDonald Robinson, Ronald D Behee, Wiebe B deBoer, Wayne L Johnson: Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus. Epsilon Partnership, David G Rosenbaum, Harry M Weiss, December 6, 1988: US04789771 (64 worldwide citation)

An apparatus and method for heating a substrate and associated rotatable susceptor in an epitaxial deposition reactor with an axially symmetric gas flow carrying deposition material include at least one chamber having a plurality of heat lamps. The chamber is generally symmetric with respect to an a ...


9
Wiebe B deBoer, Klavs F Jensen, Wayne L Johnson, Gary W Read, McDonald Robinson: Apparatus for chemical vapor deposition using an axially symmetric gas flow. Epsilon, David G Rosenbaum, Harry M Weiss, January 17, 1989: US04798165 (59 worldwide citation)

In a chemical vapor deposition chamber, an improved technique for providing deposition materials to the growth surface is described. The gas carrying deposition materials is constrained to have axial symmetry thereby providing a uniform deposition of materials on the substrate. The gas can be initia ...


10
Dennis L Goodwin, Richard Crabb, McDonald Robinson, Armand P Ferro: Wafer handling system with bernoulli pick-up. Advanced Semiconductor Materials America, Knobbe Martens Olson & Bear, June 28, 1994: US05324155 (50 worldwide citation)

An improved wafer handling system including a pair of robot arms each having a drive apparatus operatively coupled to its rear end portion for extending, retracting, and rotatably positioning the robot arms. The opposite end of the robot arms are operatively connected to a pick-up wand. The pick-up ...



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