1
Brian S Beaman, Fuad E Doany, Keith E Fogel, James L Hedrick Jr, Paul A Lauro, Maurice H Norcott, John J Ritsko, Leathen Shi, Da Yuan Shih, George F Walker: Three dimensional high performance interconnection package. International Business Machines Corporation, Daniel P Morris, December 6, 1994: US05371654 (318 worldwide citation)

The present invention is directed to a structure for packaging electronic devices, such as semiconductor chips, in a three dimensional structure which permits electrical signals to propagate both horizontally and vertically. The structure is formed from a plurality of assemblies. Each assembly is fo ...


2
Brian S Beaman, Keith E Fogel, Paul A Lauro, Maurice H Norcott, Da Yuan Shih, George F Walker: Test probe having elongated conductor embedded in an elostomeric material which is mounted on a space transformer. International Business Machines Corporation, Daniel P Morris, June 3, 1997: US05635846 (218 worldwide citation)

A high density test probe is for testing a high density and high performance integrated circuits in wafer form or as discrete chips. The test probe is formed from a dense array of elongated electrical conductors which are embedded in an compliant or high modulus elastomeric material. A standard pack ...


3
Brain S Beaman, Fuad E Doany, Keith E Fogel, James L Hedrick Jr, Paul A Lauro, Maurice H Norcott, John J Ritsko, Leathen Shi, Da Yuan Shih, George F Walker: Method of forming a three dimensional high performance interconnection package. International Business Machines Corporation, Daniel P Morris, July 2, 1996: US05531022 (212 worldwide citation)

The present invention is directed to a structure for packaging electronic devices, such as semiconductor chips, in a three dimensional structure which permits electrical signals to propagate both horizontally and vertically. The structure is formed from a plurality of assemblies. Each assembly is fo ...


4
Brian Samuel Beaman, Keith Edward Fogel, Paul Alfred Lauro, Maurice H Norcott, Da Yuan Shih, George Frederick Walker: Method of making high density integral test probe. International Business Machines Corporation, Daniel P Morris, December 25, 2001: US06332270 (164 worldwide citation)

A high density integrated test probe and method of fabrication is described. A group of wires are ball bonded to contact locations on the surface of a fan out substrate. The wires are sheared off leaving a stub, the end of which is flattened by an anvil. Before flattening a sheet of material having ...


5
Keith E Fogel, Maurice H Norcott, Devendra K Sadana: Ultimate SIMOX. International Business Machines Corporation, Robert M Trepp Esq, Scully Scott Murphy & Presser, April 1, 2003: US06541356 (60 worldwide citation)

A method of forming a silicon-on-insulator (SOI) substrate having a buried oxide region that has a greater content of thermally grown oxide as compared to oxide formed by implanted oxygen ions is provided. Specifically, the inventive SOI substrate is formed by utilizing a method wherein oxygen ions ...


6
Brian Samuel Beaman, Keith Edward Fogel, Paul Alfred Lauro, Maurice H Norcott, Da Yuan Shih, George Frederick Walker: High density integral test probe. International Business Machines Corporation, Daniel P Morris, October 2, 2007: US07276919 (28 worldwide citation)

A high density integrated test probe and method of fabrication is described. A group of wires are ball bonded to contact locations on the surface of a fan out substrate. The wires are sheared off leaving a stub, the end of which is flattened by an anvil. Before flattening a sheet of material having ...


7
Maurice H Norcott, Devendra K Sadana: Control of buried oxide quality in low dose SIMOX. International Business Machines Corporation, Robert M Trepp, Scully Scott Murphy & Presser, November 26, 2002: US06486037 (12 worldwide citation)

A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing an oxygen ion implantation step to create a stable defect region; a low energy implantation step to create an amorphous layer adjacent to the stable defect region, wherein the low energy impla ...


8
Keith E Fogel, Maurice H Norcott, Devendra K Sadana: Ultimate SIMOX. International Business Machines Corporation, Robert M Trepp, Scully Scott Murphy & Presser, April 6, 2004: US06717217 (5 worldwide citation)

A method of forming a silicon-on-insulator (SOI) substrate having a buried oxide region that has a greater content of thermally grown oxide as compared to oxide formed by implanted oxygen ions is provided. Specifically, the inventive SOI substrate is formed by utilizing a method wherein oxygen ions ...


9
Maurice H Norcott, Devendra K Sadana: Control of buried oxide quality in low dose SIMOX. International Business Machines Corporation, Robert M Trepp, Scully Scott Murphy & Presser, June 29, 2004: US06756639 (2 worldwide citation)

A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing an oxygen ion implantation step to create a stable defect region; a low energy implantation step to create an amorphous layer adjacent to the stable defect region, wherein the low energy impla ...


10
Maurice H Norcott, Devendra K Sadana: Control of buried oxide quality in low dose SIMOX. International Business Machines Corporation, Scully Scott Muphy & Presser, October 25, 2001: US20010033002-A1

A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing an oxygen ion implantation step to create a stable defect region; a low energy implantation step to create an amorphous layer adjacent to the stable defect region, wherein the low energy impla ...