1
Katsutoshi Takeda, Masao Isomura: Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device. Sanyo Electric, Darby & Darby, May 23, 2006: US07049190 (2582 worldwide citation)

A ZnO buffer layer having an electric conductivity of 1×10−9 S/cm or lower or alternatively a ZnO buffer layer having a diffraction peak of a crystal face other than (002) and (004) in X-ray diffraction is formed on a substrate by sputtering. A ZnO semiconductor layer is formed on the ZnO buffer lay ...


2
Masaki Shima, Toshihiro Kinoshita, Masao Isomura: Amorphous silicon germanium thin film and photovoltaic element. Sanyo Electric, W F Fasse, W G Fasse, June 27, 2000: US06080998 (6 worldwide citation)

An amorphous silicon germanium thin film is disclosed which contains hydrogen and germanium in concentrations of 5-10 atomic percent and 40-55 atomic percent, respectively for exhibiting the optical gap in the range of 1.30-1.40 eV. Also disclosed is a photovoltaic element incorporating the amorphou ...


3
Masao Isomura: Photovoltaic device. Sanyo Electric, Arent Fox Kintner Plotkin & Kahn PLLC, February 18, 2003: US06521883 (5 worldwide citation)

This invention provides a photovoltaic device including an n-type microcrystalline Si layer, an i-type microcrystalline SiGe layer, and a p-type microcrystalline Si layer laminated on a substrate and using a thin microcrystalline silicon based semiconductor layer as a photoactive layer. The i-type m ...


4
Katsutoshi Takeda, Masao Isomura: Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device. Sanyo Electric, Darby & Darby PC, February 26, 2004: US20040038446-A1

A ZnO buffer layer having an electric conductivity of 1×109 S/cm or lower or alternatively a ZnO buffer layer having a diffraction peak of a crystal face other than (002) and (004) in X-ray diffraction is formed on a substrate by sputtering. A ZnO semiconductor layer is formed on the ZnO buffer laye ...


5
Masao Isomura: Photovoltaic device. Sanyo Electric, Arent Fox Kintner Plotkin & Kahn Pllc, January 24, 2002: US20020008192-A1

This invention provides a photovoltaic device including an n-type microcrystalline Si layer, an i-type microcrystalline SiGe layer, and a p-type microcrystalline Si layer laminated on a substrate and using a thin microcrystalline silicon based semiconductor layer as a photoactive layer. The i-type m ...