1
Masanori Nishiguchi, Atsushi Miki: Substrate for packaging a semiconductor device. Sumitomo Electric, Cushman Darby & Cushman, May 25, 1993: US05214308 (285 worldwide citation)

A substrate for packaging a semiconductor device having a bump thereon according to the present invention is characterized by that the substrate has an electrode terminal to which the bump is to be connected, and a recess for receiving at least a top of the bump is formed in the electrode terminal.


2
Masanori Nishiguchi, Atsushi Miki: Substrate for packaging a semiconductor device having particular terminal and bump structure. Sumitomo Electric, Cushman Darby & Cushman, March 23, 1993: US05196726 (169 worldwide citation)

A substrate for packaging a semiconductor device having a bump thereon according to the present invention is characterized by that the substrate has an electrode terminal to which the bump is to be connected, the electrode terminal has a recess formed thereon to the receive at least a top of the bum ...


3
Tatsuya Hashinaga, Masanori Nishiguchi: Burn-in apparatus and method for self-heating semiconductor devices having built-in temperature sensors. Sumitomo Electric, Cushman Darby & Cushman, April 11, 1995: US05406212 (64 worldwide citation)

A burn-in apparatus for use in burn-in tests includes a burn-in test chamber for accommodating a plurality of semiconductor devices to be tested. The burn-in apparatus further includes measuring means for detecting electric characteristics of temperature sensors built in semiconductor devices to mea ...


4
Masanori Nishiguchi: Semiconductor device and production method thereof. Sumitomo Electric, Cushman Darby & Cushman, February 23, 1993: US05188984 (62 worldwide citation)

A semiconductor device is produced through processes that; ionized material is poured into a predetermined depth of a silicon substrate so as to be made into etching stopper layer, a predetermined area of the silicon substrate is etched up to the depth of the etching stopper layer so as to form a co ...


5
Masanori Nishiguchi, Takeshi Sekiguchi: Suction device. Sumitomo Electric, Cushman Darby & Cushman, February 27, 1990: US04904012 (55 worldwide citation)

Suction device for handling a semiconductor wafer comprises a handling section having a plurality of suction ports opened in the same plane as the surface of the wafer and located within an area smaller than that of the surface of the wafer, a pressure reduction device connected to the suction port, ...


6
Ichiro Sogawa, Taketsune Morikawa, Koro Yotsuya, Masanori Nishiguchi, Munekazu Imamura, Yasuhiko Shirakura: Catheter type sensor. Sumitomo Electric, Cushman Darby & Cushman, March 7, 1989: US04809704 (52 worldwide citation)

A catheter type sensor, which is inserted into a living body in order to directly measure within the living body biological data such as blood pressure, has at least one base in its distal end or intermediate portion, at least one sensor element supported on the base to detect biological data, and l ...


7
Tatsuya Hashinaga, Masanori Nishiguchi: Burn-in apparatus and method which individually controls the temperature of a plurality of semiconductor devices. Sumitomo Electric, Cushman Darby & Cushman, May 9, 1995: US05414370 (49 worldwide citation)

A burn-in apparatus used in burn-in tests includes a burn-in test chamber for accommodating a plurality of semiconductor devices to be tested. Also, the burn-in apparatus includes measuring means for detecting electric characteristics of temperature sensors built in the respective semiconductor devi ...


8
Masanori Nishiguchi: Method of adhesively and hermetically sealing a semiconductor package lid by scrubbing. Sumitomo Electric, Stevens Davis Miller & Mosher, November 12, 1991: US05064782 (48 worldwide citation)

A semiconductor device package is disclosed which includes (1) a carrier body which is to be mounted with a semiconductor device chip and which has an annular adhesion layer formed thereon, (2) a cap which is to be adhered to the carrier body to hermetically seal the carrier body, and (3) an adhesiv ...


9
Masanori Nishiguchi, Noboru Gotoh: Apparatus for grinding semiconductor wafer. Sumitomo Electric, Stevens Davis Miller & Mosher, May 19, 1992: US05113622 (42 worldwide citation)

An apparatus is provided for grinding a semiconductor wafer, which includes a table having a work stage on which a semiconductor wafer to be ground is placed, at least the work stage being rotatable about an axis, and a grinding wheel which is movable in a direction perpendicular to or parallel to t ...


10
Masanori Nishiguchi, Takeshi Sekiguchi, Ikkei Miyoshi, Kiyoshi Nishio: Surface grinding machine. Sumitomo Electric, Asahi Diamond Industrial, Nissei Industry Corporation, Cushman Darby & Cushman, July 30, 1991: US05035087 (38 worldwide citation)

A surface grinding machine comprises a wheel head vertically movably supported; a cup-shaped diamond wheel supported by a rotatable wheel shaft at one end of the wheel head and having an abrasive grain layer of Young's modulus (10-15).times.10.sup.4 kgf/cm.sup.2 at the lower end of the wheel; a whee ...