1
Masaki Matsui, Shoichi Yamauchi, Hisayoshi Ohshima, Kunihiro Onoda, Akiyoshi Asai, Takanari Sasaya, Takeshi Enya, Jun Sakakibara: Method for manufacturing a semiconductor substrate. Denso Corporation, Pillsbury Madison & Sutro, February 20, 2001: US06191007 (292 worldwide citation)

Methods for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layer on a substrate on which a buried pattern structure ...


2
Shoichi Yamauchi, Hisayoshi Ohshima, Masaki Matsui, Kunihiro Onoda, Tadao Ooka, Akitoshi Yamanaka, Toshifumi Izumi: Semiconductor substrate and method of manufacturing the same. Denso Corporation, Harness Dickey & Pierce, March 18, 2003: US06534380 (210 worldwide citation)

Before a semiconductor substrate and a base substrate is directly bonded to one another, in a protective film removing step, a contamination protective film formed on the semiconductor substrate to protect it from contamination during an ion implanting step is removed. Consequently, even when flatne ...


3
Hisayoshi Ohshima, Masaki Matsui, Kunihiro Onoda, Shoichi Yamauchi: Semiconductor substrate manufacturing method. Denso Corporation, Pillsbury Winthrop, June 26, 2001: US06251754 (158 worldwide citation)

The invention provides a number of semiconductor substrate manufacturing methods with which, in manufacturing a semiconductor substrate having a semiconductor layer in an insulated state on a supporting substrate, it is possible to obtain a thick semiconductor layer with a simple process and cheaply ...


4
Wen Li, Junzo Ukai, Hiroaki Awano, Yutaka Oyama, Masaki Matsui, Gerald Perron, Michael B Armand: Corrosion protection using carbon coated electron collector for lithium-ion battery with molten salt electrolyte. Toyota Motor Corporation, Toyota Motor Engineering & Manufacturing North America, Centre National de la Recherche, University de Montreal, Gifford Krass Sprinkle Anderson & Citkowski P C, March 25, 2008: US07348102 (34 worldwide citation)

A battery, such as a lithium-ion battery, comprises a first electrode, a second electrode, a molten salt electrolyte, and an electron collector, associated with the first electrode, the electron collector comprising an electrically conducting film. The battery further includes a protection layer sep ...


5
Hiroaki Himi, Masaki Matsui, Tosiaki Nisizawa, Seiji Fujino: Method of manufacturing semiconductor substrate. Nippondenso, Cushman Darby & Cushman, September 19, 1995: US05451547 (28 worldwide citation)

Disclosed is a method of manufacturing a semiconductor substrate by bonding two silicon crystalline wafers, and particularly, to a method of manufacturing a semiconductor substrate capable of reduced electrical resistance at the bonding interface. In the disclosed method, the silicon wafers to be bo ...


6
Seiji Fujino, Masaki Matsui, Mitsutaka Katada, Kazuhiro Tsuruta: Method of producing semiconductor substrate having dielectric separation region. Nippon Soken, Cushman Darby & Cushman, June 29, 1993: US05223450 (21 worldwide citation)

A dielectric buried layer is formed inside substrates which are directly bonded together. Firstly, a groove or a recess, or both are formed on the principal bonding plane of one of at least two kinds of semiconductor substrates to be bonded together. Once the semiconductor substrates are bonded toge ...


7
Masaki Matsui, Masatake Nagaya, Akinari Fukaya, Hiroaki Himi: Polishing method for SOI. Nippondenso, Cushman Darby & Cushman IP Group of Pillsbury Madison & Sutro, December 22, 1998: US05851846 (13 worldwide citation)

In a dielectric isolation substrate, an end point of a polishing process for selective polishing for forming an SOI layer is detected with a high precision. When polishing a wafer with a polishing pad, the temperature of a region of the polishing pad having polished the wafer at a position immediate ...


8
Masaki Matsui, Shigeo Sato, Toshiaki Fujikura, Akio Horibe, Muneki Ito: Diversity receiving device. Uniden Corporation, McDermott Will & Emery, June 14, 2005: US06907094 (13 worldwide citation)

The present invention provides a diversity receiving device with superior interference resistance in a simple construction, comprising a plurality of antennas (11, 12); an antenna switching device (13) that selects any one of a plurality of antennas (11, 12) and carries out connection switching ther ...


9
Masaki Matsui: Method and apparatus for mechanochemical polishing. Denso Corporation, Posz & Bethards, December 28, 2004: US06835120 (13 worldwide citation)

In a mechanochemical polishing apparatus, a SiC wafer is held on a wafer holding table. The surface of the wafer to be polished is pressed against a polishing cloth applied to a polishing platen with a predetermined processing pressure. The wafer holding table and polishing platen are then rotated t ...


10
Masaki Matsui, Muneki Ito, Akio Horibe, Shigeo Sato: Diversity receiver. Uniden Corporation, Morgan Lewis & Bockius, January 10, 2006: US06985544 (11 worldwide citation)

It is an object of the present invention to improve the diversity gain by conducting linear prediction of fading fluctuations and switching antennas. In order to attain this object, the diversity receiver in accordance with the present invention comprises a plurality of antennas for receiving wirele ...