1
Shunichi Ishihara, Masaaki Hirooka, Shigeru Ohno: Method for forming deposition film using Si compound and active species from carbon and halogen compound. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, July 26, 1988: US04759947 (79 worldwide citation)

A method for forming a deposition film comprises introducing, into a film forming chamber for forming a deposition film on a substrate, a silicon compound as a material for film formation and an active species generated from a compound containing carbon and halogen and capable of chemical interactio ...


2
Masaaki Hirooka: Process for producing silicon-containing deposit film. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, November 19, 1985: US04554180 (77 worldwide citation)

A process for producing silicon-containing deposit films which comprises introducing a cyclic silane represented by the general formula (SiH.sub.2).sub.n, wherein n is 4, 5, or 6, in the gaseous state together with a carrier gas into a deposition chamber and applying heat to the introduced gases at ...


3
Masaaki Hirooka, Kyosuke Ogawa, Shunichi Ishihara, Isamu Shimizu: Process for forming deposition film. Canon Kabushiki Kaishi, Fitzpatrick Cella Harper & Scinto, May 30, 1989: US04835005 (65 worldwide citation)

A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.


4
Masaaki Hirooka, Shunichi Ishihara, Junichi Hanna, Isamu Shimizu: Formation of deposited film. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, April 14, 1987: US04657777 (53 worldwide citation)

A method for forming a deposited film is provided which comprises forming a gas atmosphere containing an active species (a) obtained by decomposition of a silicon halide represented by the formula Si.sub.n X.sub.2n+2 (n is an integer of 1 or more and X represents a halogen atom) and at least one com ...


5
Shozaburo Imai, Masaaki Hirooka: Aqueous dispersion of olefin-acrylate copolymer. Sumitomo Chemical Company, Stevens Davis Miller & Mosher, January 4, 1977: US04001159 (30 worldwide citation)

An aqueous dispersion of 1 - 300 parts by weight of an olefin-acrylate copolymer, said olefin having 3 to 20 carbon atoms, in 100 parts by weight of water, the dispersion optionally containing a surface active agent in a proportion of 0.1 to 20 parts by weight per 100 parts by weight of the copolyme ...


6
Masao Ueki, Masaaki Hirooka, Junichi Hanna, Isamu Shimizu: Apparatus for forming deposited film. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, February 14, 1989: US04803947 (29 worldwide citation)

There is disclosed an apparatus for forming deposited film which forms deposited film on a substrate by introducing a gaseous starting material for formation of deposited film and a gaseous oxidizing agent having the property of oxidation action for said gaseous starting material through separate ro ...


7
Masaaki Hirooka, Shunichi Ishihara, Junichi Hanna, Isamu Shimizu: Apparatus for continuously preparing a light receiving element for use in photoelectromotive force member or image-reading photosensor. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, January 17, 1989: US04798166 (27 worldwide citation)

There is provided an apparatus for continuously preparing an improved light receiving element for photoelectromotive force member or image-reading photosensor comprising the plural number of continuously connected reaction chambers through opening and shutting gates for forming respective constituen ...


8
Masahiro Kanai, Masaaki Hirooka, Jun Ichi Hanna, Isamu Shimizu: Method for forming thin film multi-layer structure member. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, September 19, 1989: US04868014 (24 worldwide citation)

A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a ...


9
Masaaki Hirooka, Yoshikazu Fujii, Kentaro Mashita, Fumiyuki Kimura: Alternating copolymers having functional group and process for producing same. Sumitomo Chemical Company, Stevens Davis Miller & Mosher, May 18, 1976: US03957732 (22 worldwide citation)

Novel alternating copolymers having functional groups are prepared by subjecting to alternating copolymerization at least one olefin, at least one acrylic ester and at least one .alpha.,.beta.-ethylenically unsaturated dicarboxylic acid or its derivative represented by the formula: ##EQU1## wherein ...


10
Masaaki Hirooka, Kyosuke Ogawa, Shunichi Ishihara, Isamu Shimizu: Process for forming deposition film. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, June 8, 1999: US05910342 (22 worldwide citation)

A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.