1
Michael Kelly, Oliver Ambacher, Martin Stutzmann, Martin Brandt, Roman Dimitrov, Robert Handschuh: Method of separating two layers of material from one another and electronic components produced using this process. Siemens Aktiengesellschaft, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, May 6, 2003: US06559075 (203 worldwide citation)

A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, i ...


2
Michael Kelly, Oliver Ambacher, Martin Stutzmann, Martin Brandt, Roman Dimitrov, Robert Handschuh: Method of separating two layers of material from one another. Siemens Aktiengesellschaft, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, May 25, 2004: US06740604 (73 worldwide citation)

A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, i ...


3
Michael Kelly, Oliver Ambacher, Martin Stutzmann, Martin Brandt, Roman Dimitrov, Robert Handschuh: Method for transferring a semiconductor body from a growth substrate to a support material. Osram, Cohen Pontani Lieberman & Pavane, March 11, 2008: US07341925 (21 worldwide citation)

A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a regio ...


4
Martin Stutzmann, Christoph E Nebel, Paulo V Santos, Moritz Heintze: Method of fabricating an electronic micropatterned electrode device. Max Planck Gesellschaft zur Forderung der Wissenschaften e V, Nields Lemack & Dingman, September 22, 1998: US05810945 (19 worldwide citation)

An electronic device, particularly a solar cell, comprising a layer (16) of amorphous silicon (a-Si) and at least two layered electrodes (14, 18) each having an interface (20, 22) bordering said a-Si layer, in which at least one of the electrodes (14) is provided with pattern elements (14a) forming ...


5
Martin Stutzmann, Martin S Brandt, Alf Breitschwerdt, Heinz D Fuchs, Joerg Weber: Device comprising a luminescent material. Max Planck Gesellschaft zur Foerderung der Wissenschaften e V, Frishauf Holtz Goodman Langer & Chick P C, November 26, 1996: US05578379 (16 worldwide citation)

Siloxene and siloxene derivatives are compatible with silicon and may be generated as epitaxial layer on a silicon monocrystal. This permits the production of novel and advantageous electroluminescent devices, such as displays, image converters, optoelectric integrated circuits. Siloxene and siloxen ...


6
Michael Kelly, Oliver Ambacher, Martin Stutzmann, Martin Brandt, Roman Dimitrov, Robert Handschuh: Method of producing a light-emitting diode. Siemens Aktiengesellschaft, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, December 13, 2005: US06974758 (8 worldwide citation)

A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, i ...


7
Michael Kelly, Oliver Ambacher, Martin Stutzmann, Martin Brandt, Roman Dimitrov, Robert Handschuh: Electronic components produced by a method of separating two layers of material from one another. Osram, Cohen Pontani Lieberman & Pavane, May 11, 2010: US07713840 (4 worldwide citation)

A semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure. The semiconductor body is transferred from a growth substrate to a support material by: exposing an interface between the growth substrate and the semi ...


8
Martin Stutzmann, Martin S Brandt, Alf Breitschwerdt, Heinz D Fuchs, Joerg Weber: Method of producing a device comprising a luminescent material. Max Planck Gesellschaft zur Foerderung der Wissenschaften e v, Frishauf Holtz Goodman Langer & Chick P C, April 29, 1997: US05624705 (3 worldwide citation)

Siloxene and siloxene derivatives are compatible with silicon and may be generated as epitaxial layer on a silicon monocrystal. This permits the production of novel and advantageous electroluminescent devices, such as displays, image converters, optoelectric integrated circuits. Siloxene and siloxen ...


9
Stefan Thalhammer, Markus Hofstetter, John Howgate, Martin Stutzmann: X-ray camera for the high-resolution detection of X-rays. Helmholtz Zentrum Muenchen Deutsches Forschungszentrum fuer Gesundheit und Umwelt, Caesar Rivise PC, May 31, 2016: US09354329 (1 worldwide citation)

The invention relates to an X-ray camera (100) for the high-resolution detection of X-rays (1), comprising a plurality of radiation detectors (10), each of which has a carrier substrate (11), a detector layer (12), and contact electrodes (13). The detector layer (12) contains GaN, lies on the carrie ...


10
G√ľnther Vogg, Martin Brandt, Martin Stutzmann: Semiconductor polymers, method for the production thereof and an optoelectronic component. Osram Opto Semiconductors, Fish & Richardson P C, July 22, 2008: US07402891 (1 worldwide citation)

Layered germanium polymers that are semiconductive and demonstrate a strong red or infrared luminescence are produced through the topochemical conversion of calcium digermanide. Furthermore, silicon/germanium layer polymers can also be produced in this manner. These layer polymers can be produced ep ...