1
Martin Stutzmann, Martin S Brandt, Alf Breitschwerdt, Heinz D Fuchs, Joerg Weber: Device comprising a luminescent material. Max Planck Gesellschaft zur Foerderung der Wissenschaften e V, Frishauf Holtz Goodman Langer & Chick P C, November 26, 1996: US05578379 (17 worldwide citation)

Siloxene and siloxene derivatives are compatible with silicon and may be generated as epitaxial layer on a silicon monocrystal. This permits the production of novel and advantageous electroluminescent devices, such as displays, image converters, optoelectric integrated circuits. Siloxene and siloxen ...


2
Martin Stutzmann, Martin S Brandt, Alf Breitschwerdt, Heinz D Fuchs, Joerg Weber: Method of producing a device comprising a luminescent material. Max Planck Gesellschaft zur Foerderung der Wissenschaften e v, Frishauf Holtz Goodman Langer & Chick P C, April 29, 1997: US05624705 (3 worldwide citation)

Siloxene and siloxene derivatives are compatible with silicon and may be generated as epitaxial layer on a silicon monocrystal. This permits the production of novel and advantageous electroluminescent devices, such as displays, image converters, optoelectric integrated circuits. Siloxene and siloxen ...


3
André Ebbers, Martin Trocha, Robert Lechner, Martin S Brandt, Martin Stutzmann, Hartmut Wiggers: Porous semiconductive film and process for its production. Evonik Degussa, Oblon Spivak McClelland Maier & Neustadt L, October 25, 2011: US08043909

The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10−8 S·cm−1 to 10 S·cm−1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size ...


4
Martin S Brandt, Sebastian TB Goennenwein, Tobias Graf, Thomas Wassner, Hans Huebl: Device having a structural element with magnetic properties, and method. Slater & Matsil, October 26, 2006: US20060240992-A1

A preferred embodiment of the invention provides a device having a structural element, which has magnetic properties that are dependent on the hydrogen content in the structural element, the structural element containing hydrogen. In a preferred embodiment, the magnetic properties of a material are ...


5
Andrea Baumer, Martin S Brandt, Martin Stutzmann, Hartmut Wiggers: Nanoscale silicon particles. Degussa, Oblon Spivak Mcclelland Maier & Neustadt, September 2, 2010: US20100221544-A1

Nanoscale silicon particles, essentially hydrogen terminated nanoscale silicon particles, essentially alkyl terminated nanoscale silicon particles, partially alkyl terminated nanoscale silicon particles, methods for producing the particles, and methods for forming electrical components, electronic c ...


6
Andre EBBERS, Martin TROCHA, Robert LECHNER, Martin S BRANDT, Martin STUTZMANN, Hartmut WIGGERS: Porous semiconductive film and process for its production. EVONIK DEGUSSA, Oblon Spivak Mcclelland Maier & Neustadt PC, January 29, 2009: US20090026458-A1

The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10−8 S·cm−1 to 10 S·cm−1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size ...