41
Toshiharu Furukawa, Mark C Hakey, David V Horak, Charles W Koburger III, Mark E Masters, Peter H Mitchell: Vertical carbon nanotube transistor integration. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Richard M Kotulak Esq, May 19, 2009: US07535016 (15 worldwide citation)

A hybrid semiconductor structure which includes a horizontal semiconductor device and a vertical carbon nanotube transistor, where the vertical carbon nanotube transistor and the horizontal semiconductor device have at least one shared node is provided. The at least one shared node can include, for ...


42
Mark C Hakey, Steven J Holmes, David V Horak, Ahmad D Katnani, Niranjan M Patel, Paul A Rabidoux: Integrated circuit chip produced by using frequency doubling hybrid photoresist. International Business Machines Corporation, Mark F Chadurjian, Schmeiser Olsen & Watts, November 6, 2001: US06313492 (15 worldwide citation)

A photoresist composition is disclosed having both negative tone and positive tone responses, giving rise to spaces being formed in the areas of diffraction which are exposed to intermediate amounts of radiation energy. This resist material may be used to print doughnut shapes or may be subjected to ...


43
Keith E Fogel, Mark C Hakey, Steven J Holmes, Devendra K Sadana, Ghavam G Shahidi: Patterned SOI by oxygen implantation and annealing. International Business Machines Corporation, Scully Scott Murphy & Presser, Robert M Trepp Esq, January 25, 2005: US06846727 (14 worldwide citation)

Methods for forming a patterned SOI region in a Si-containing substrate are provided which has geometries of about 0.25 μm or less. The methods disclose each utilize a patterned dielectric mask that includes at least one opening having a size of about 0.25 μm or less which exposes a portion of a Si- ...


44
William J Adair, Richard A Ferguson, Mark C Hakey, Steven J Holmes, David V Horak, Robert K Leidy, William Hsioh Lien Ma, Ronald M Martino, Song Peng: Method for forming cornered images on a substrate and photomask formed thereby. International Business Machines Corporation, Mark F Chadurjian, Schmeiser Olsen & Watts, September 28, 1999: US05959325 (14 worldwide citation)

A method for forming square shape images in a lithographic process is disclosed wherein a first plurality of lines running in a first direction is defined in a first, usually sacrificial, layer, and then a second resist is defined wherein the lines run in an intersecting pattern to those of the firs ...


45
Mark C Hakey, Mark E Masters, Leah M P Pastel, David P Vallett: Integrated carbon nanotube sensors. International Business Machines Corporation, Gibb & Rahman, Robert A Walsh Esq, July 24, 2007: US07247877 (13 worldwide citation)

A method and structure for an integrated circuit comprising a first transistor and an embedded carbon nanotube field effect transistor (CNT FET) proximate to the first transistor, wherein the CNT FET is dimensioned smaller than the first transistor. The CNT FET is adapted to sense signals from the f ...


46
Toshiharu Furukawa, Mark C Hakey, Steven J Holmes, David V Horak, James M Leas, William H L Ma, Paul A Rabidoux: Vertical dual gate field effect transistor. International Business Machines Corporation, Whitham Curtis Christofferson & Cook PC, William D Sabo, February 13, 2007: US07176089 (12 worldwide citation)

A method of manufacturing provides a vertical transistor particularly suitable for high density integration and which includes potentially independent gate structures on opposite sides of a semiconductor pillar formed by etching or epitaxial growth in a trench. The gate structure is surrounded by in ...


47
Toshiharu Furukawa, Mark C Hakey, Steven J Holmes, David V Horak, Charles W Koburger III: Non-volatile switching and memory devices using vertical nanotubes. International Business Machines Corporation, Schmeiser Olsen & Watts, William D Sabo, April 1, 2008: US07352607 (12 worldwide citation)

Non-volatile and radiation-hard switching and memory devices using vertical nano-tubes and reversibly held in state by van der Waals' forces and methods of fabricating the devices. Methods of sensing the state of the devices include measuring capacitance, and tunneling and field emission currents.


48
Toshiharu Furukawa, Mark C Hakey, Steven J Holmes, David V Horak, Paul A Rabidoux: Method for forming a horizontal surface spacer and devices formed thereby. International Business Machines Corporation, Eugene I Shkurko, Schmeiser Olsen & Watts, August 8, 2000: US06100172 (12 worldwide citation)

The present invention provides a method for forming self-aligned spacers on the horizontal surfaces while removing spacer material from the vertical surfaces. The preferred method uses a resist that can be made insoluble to developer by the use of an implant. By conformally depositing the resist ove ...


49
Albert S Bergendahl, Mark C Hakey, John P Wilson: Process for increasing resolution of photolithographic images. International Business Machines Corporation, Francis J Thornton, July 19, 1983: US04394437 (12 worldwide citation)

The present invention describes conformable masking techniques which can be successfully made and used in a practical manufacturing environment while providing increased resolution of photolithographic images while eliminating all manner of defects that might presently be encountered in the masks cu ...


50
Diane C Boyd, Toshiharu Furukawa, Mark C Hakey, Steven J Holmes, David V Horak, William H Ma, Paul A Rabidoux: Method for varying x-ray hybrid resist space dimensions. Internaitonal Business Machines Corporation, Eugene I Shkurko, Schmeiser Olsen & Watts, January 11, 2000: US06014422 (12 worldwide citation)

The present invention provides combining the advantages of hybrid resist with the unique properties of x-ray lithography to form high tolerance devices with x-ray pitch and to provide a means for varying the space width and fine tuning to account for process variations. Accordingly, a space width in ...