11
Steven J Holmes, Charles Black, David J Frank, Toshiharu Furukawa, Mark C Hakey, David V Horak, William Hsioh Lien Ma, Keith R Milkove, Kathryn W Guarini: Semiconductor with nanoscale features. International Business Machines Corporation, Mark F Chadurjian, Cantor Colburn, January 14, 2003: US06506660 (60 worldwide citation)

Described is a method of increasing the capacitance of semiconductor capacitors by providing a first solid-state electrode pattern on a semiconductor medium, etching topographic features on said first electrode pattern in a manner effective in increasing the surface area of said first electrode patt ...


12
Gary B Bronner, Toshiharu Furukawa, Mark C Hakey, Steven J Holmes, David V Horak, Jack A Mandelman, Paul A Rabidoux: DRAM cell with grooved transfer device. International Business Machines Corporation, Eugene I Shkurko, Scully Scott Murphy & Presser, August 31, 1999: US05945707 (48 worldwide citation)

A memory cell having a grooved gate formed in a sub-lithographic groove, and methods of making thereof are disclosed. The groove extends the channel length to include the groove sidewalls and width of the groove. Sidewall sections of the channel located along the gate sidewalls have a larger length ...


13
Toshiharu Furukawa, Mark C Hakey, Steven J Holmes, David V Horak, H Bernhard Pogge, Edmund J Sprogis, Steven H Voldman: Structure and process for multi-chip chip attach with reduced risk of electrostatic discharge damage. International Business Machines Corporation, Lawrence R Fraley Esq, Ratner & Prestia, August 6, 2002: US06429045 (48 worldwide citation)

A technique for fabricating precision aligned macros (PAMs) with reduced risk of electrostatic discharge damage and thermal damage. An electrical and thermal contact is provided through the back of the individual chips to a supporting silicon substrate. A conductive seed layer for electroplating is ...


14
Mark C Hakey, Steven J Holmes, David V Horak, Harold G Linde, Edmund J Sprogis: Method of assembling a plurality of semiconductor devices having different thickness. International Business Machines Corporation, Mark F Chadurjian, Schmeiser Olsen & Watts, September 30, 2003: US06627477 (43 worldwide citation)

The present invention provides a method of forming an integrated semiconductor device, and the device so formed. An active surface of at least two semiconductor devices, such as semiconductor chips, are temporarily mounted onto an alignment substrate. A support substrate is affixed to a back surface ...


15
William J Adair, Richard A Ferguson, Mark C Hakey, Steven J Holmes, David V Horak, Robert K Leidy, William Hsioh Lien Ma, Ronald M Martino, Song Peng: Method for forming cornered images on a substrate and photomask formed thereby. International Business Machines Corporation, Mark F Chadurjian, Schmeiser Olsen & Watts, February 6, 2001: US06184151 (40 worldwide citation)

A method for forming square shape images in a lithographic process is disclosed wherein a first plurality of lines running in a first direction is defined in a first, usually sacrificial, layer, and then a second resist is defined wherein the lines run in an intersecting pattern to those of the firs ...


16
Mark C Hakey, Steven J Holmes, David V Horak, Ahmad D Katnani, Niranjan M Patel, Paul A Rabidoux: Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same. International Business Machines Corporation, William D Sabo, Schmeiser Olsen & Watts, September 5, 2000: US06114082 (38 worldwide citation)

A photoresist composition is disclosed having both negative tone and positive tone responses, giving rise to spaces being formed in the areas of diffraction which are exposed to intermediate amounts of radiation energy. This resist material may be used to print doughnut shapes or may be subjected to ...


17
Steven J Holmes, Mark C Hakey, Toshiharu Furukawa, David V Horak: Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system. International Business Machines Corporation, Schmeiser Olsen & Watts, Steven Capella, April 22, 2008: US07362412 (36 worldwide citation)

A method and apparatus for reduction and prevention of residue formation and removal of residues formed in an immersion lithography tool. The apparatus including incorporation of a cleaning mechanism within the immersion head of an immersion lithographic system or including a cleaning mechanism in a ...


18
Dinesh A Badami, Mark C Hakey, Holger Moritz: Process for delineating photoresist lines at pattern edges only using image reversal composition with diazoquinone. International Business Machines Corporation, Barbara A McDowell, Mark F Chadurjian, Howard J Walter, February 4, 1986: US04568631 (32 worldwide citation)

An optical photolithographic process in which resist lines having widths in the micron and sub-micron range are produced without the use of a fine line photomask. A positive photoresist having an additive for image reversal is applied to the surface of a semiconductor substrate. The photoresist is e ...


19
Mark C Hakey, Steven J Holmes, David V Horak, William H Ma: Fabrication method for high-capacitance storage node structures. International Business Machines Corporation, Eugene I Shkurko, Whitham Curtis & Whitham, July 7, 1998: US05776660 (31 worldwide citation)

A high capacitance storage node structure is created in a substrate by patterning a hybrid resist (12) to produce both negative tone (16) and positive tone (18) areas in the exposed region (14). After removal of the positive tone areas (18), the substrate (12) is etched using the unexposed hybrid re ...


20
Gary B Bronner, Toshiharu Furukawa, Mark C Hakey, Steven J Holmes, David V Horak, Jack A Mandelman, Paul A Rabidoux: Method for making a DRAM cell with grooved transfer device. International Business Machines Coirporation, Eugene I Shkurko Esq, Scully Scott Murphy & Presser, March 14, 2000: US06037194 (30 worldwide citation)

A memory cell having a grooved gate formed in a sub-lithographic groove, and methods of making thereof are disclosed. The groove extends the channel length to include the groove sidewalls and width of the groove. Sidewall sections of the channel located along the gate sidewalls have a larger length ...