1
Katherina Babich
Marie Angelopoulos, Katherina Babich, Alfred Grill, Scott David Halle, Arpan Pravin Mahorowala, Vishnubhai Vitthalbhai Patel: Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof. International Business Machines Corporation, Daniel P Morris, February 4, 2003: US06514667 (53 worldwide citation)

A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and ...


2
Katherina Babich
Dirk Pfeiffer, Marie Angelopoulos, Katherina Babich, Phillip Brock, Wu Song Huang, Arpan P Mahorowala, David R Medeiros, Ratnam Sooriyakumaran: Antireflective SiO-containing compositions for hardmask layer. International Business Machines Corporation, Steven Capella, May 4, 2004: US06730454 (50 worldwide citation)

Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity prope ...


3
Katherina Babich
Marie Angelopoulos, Katherina E Babich, David R Medeiros, Wayne M Moreau: Multifunctional polymeric materials and use thereof. International Business Machines Corporation, Daniel P Morris, Connolly Bove Lodge & Hutz, February 3, 2004: US06686124 (24 worldwide citation)

A multifunctional polymer comprising a polymeric chain having chromophore groups and cross-linking sites is suitable as a resist material and especially as the underlayer for bilayer and top surface imaging strategies. The multifunctional polymer can function as an antireflective coating, planarizin ...


4
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R Medeiros, Wayne Martin Moreau, Karen E Petrillo, John P Simons: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof. International Business Machines Corporation, Thomas A Berk, Daniel P Morris, April 22, 2008: US07361444 (9 worldwide citation)

Disclosed are multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist st ...


5
Katherina Babich
Marie Angelopoulos, Edward D Babich, Inna V Babich, Katherina E Babich, James J Bucchignano, Karen E Petrillo, Steven A Rishton: Forming a pattern of a negative photoresist. International Business Machines Corporation, Daniel P Morris, Pollock Vande Sande & Amernick, June 26, 2001: US06251569 (9 worldwide citation)

A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.


6
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Cameron James Brooks, S Jay Chey, C Richard Guarnieri, Michael Straight Hibbs, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. International Business Machines Corporation, Daniel P Morris, November 25, 2003: US06653027 (5 worldwide citation)

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained ...


7
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R Medeiros, Wayne Martin Moreau, Karen E Petrillo, John P Simons: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof. International Business Machines Corporation, Thomas A Beck, Daniel P Morris, May 4, 2010: US07709177 (5 worldwide citation)

Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibi ...


8
Katherina Babich
Marie Angelopoulos, Katherina Babich, S Jay Chey, Michael Straight Hibbs, Robert N Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. International Business Machines Corporation, Daniel P Morris Esq, Scully Scott Murphy & Presser, January 27, 2004: US06682860 (4 worldwide citation)

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of ...


9
Katherina Babich
Marie Angelopoulos, Katherina Babich, S Jay Chey, Michael Straight Hibbs, Robert N Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. International Business Machines Corporation, Daniel P Morris Esq, Scully Scott Murphy & Presser, May 4, 2004: US06730445 (4 worldwide citation)

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of ...


10
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a lithographic structure using antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Daniel P Morris Esq, October 23, 2012: US08293454 (2 worldwide citation)

A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a trans ...



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