A trench MOS Schottky barrier rectifier includes a semiconductor substrate having first and second faces, a cathode region of first conductivity type at the first face and a drift region of first conductivity type on the cathode region, extending to the second face. First and second trenches are for ...
An integrated circuit (IC) includes at least one NMOS transistor, wherein the NMOS transistor includes a substrate having a semiconductor surface, and a gate stack formed in or on the surface including a gate electrode on a gate dielectric, wherein a channel region is located in the semiconductor su ...
A bidirectional semiconductor switching device includes a semiconductor substrate having first and second device terminals on opposite faces thereof, a thyristor in the substrate for providing regenerative conduction in a first direction, between the first device terminal and the second device termi ...
A method of photolithographically forming an integrated circuit feature, such as a conductive structure, for example a gate electrode (
The present invention pertains to forming respective silicides on multiple transistors in a single process. High performance is facilitated with simple and highly integrated process flows. As such, transistors, and an integrated circuit containing the transistors, can be fabricated efficiently and a ...
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit. The method for manufacturing the semiconductor device, among other steps, includes forming a capping layer (210) over a transistor device having source/drain regions ...
A method of forming a generally T-shaped structure. The method comprises forming a poly/amorphous silicon layer stack which comprises a polysilicon layer and a generally amorphous silicon layer overlying the polysilicon layer. The method further comprises selectively etching the poly/amorphous silic ...
A method (1300) of forming a semiconductor device comprising an isolation structure is disclosed, and includes forming a trench region within a semiconductor body (1308). Then, surfaces of the trench region are nitrided (1310) via a nitridation process. An oxidation process is performed that combine ...
Pipe defects in n-type lightly doped drain (NLDD) regions and n-type source/drain (NDS) regions are associated with arsenic implants, while excess diffusion in NLDD and NSD regions is mainly due to phosphorus interstitial movement. Carbon implantation is commonly used to reduce phosphorus diffusion ...
