1
Takeo Tsukamoto, Mamoru Miyawaki, Tetsuya Kaneko, Akira Suzuki, Isamu Shimoda, Toshihiko Takeda, Masahiko Okunuki: Electron emission device. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, February 27, 1990: US04904895 (166 worldwide citation)

An electron emission device comprises an electron emission electrode with a pointed end and a counter electrode positioned opposite to the pointed end, both formed by fine working of a conductive layer laminated on an insulating substrate.


2
Mamoru Miyawaki, Shigeki Kondo, Yoshio Nakamura, Tetsunobu Kouchi: Image display device with a transistor on one side of insulating layer and liquid crystal on the other side. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, May 31, 1994: US05317433 (137 worldwide citation)

Variations in the individual liquid crystal cells and cross-talk between adjacent pixels are reduced, stable operation is maintained and the aperture and the S/N ratio are increased by providing a transistor and an interconnection layer therefor on one surface of an insulating layer while providing ...


3
Takanori Watanabe, Mamoru Miyawaki, Shunsuke Inoue, Tetsunobu Kochi: Display device having a silicon substrate, a locos film formed on the substrate, a tensile stress film formed on the locos film, and TFTs formed on the tensile stress film. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, September 29, 1998: US05815223 (110 worldwide citation)

A display device including a liquid crystal held between an active matrix substrate made up by arranging thin film transistors thereon, each using polycrystalline silicon as a semiconductor layer, in one-to-one relation to intersections between a plurality of signal lines and a plurality of scan lin ...


4
Shunsuke Inoue, Toru Koizumi, Mamoru Miyawaki, Shigetoshi Sugawa: Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, May 2, 1995: US05412240 (91 worldwide citation)

A semiconductor device has an NMOS transistor and a PMOS transistor formed on at least one monocrystal Si region formed in a thin-film Si layer formed on an insulation layer. The thickness T.sub.BOX of the insulation layer on which the NMOS and PMOS transistors are formed, the voltage V.sub.SS of a ...


5
Shunsuke Inoue, Mamoru Miyawaki, Tetsunobu Kochi: Semiconductor device, and operating device, signal converter, and signal processing system using the same semiconductor device. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, June 18, 2002: US06407442 (86 worldwide citation)

In a semiconductor device which has capacitors respectively connected to multiple input terminals, and in which the remaining terminals of the capacitors are commonly connected to a sense amplifier, the capacitors and the sense amplifier are formed by utilizing a semiconductor layer on an insulating ...


6
Katsuhito Sakurai, Mamoru Miyawaki, Akira Ishizaki: Method of driving image display apparatus. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, November 26, 1996: US05579027 (78 worldwide citation)

An image display apparatus, having a pixel configuration in which pixels on the n-th line and pixels on the n+1-th line are deviated in the horizontal direction, improves the resolution in the horizontal direction by changing over an image signal to be sampled between a delay signal DL and a through ...


7
Junichi Hoshi, Shigetoshi Sugawa, Shunsuke Inoue, Osamu Hamamoto, Yoshihiko Fukumoto, Yutaka Genchi, Masaru Kamio, Mamoru Miyawaki: Liquid crystal display device. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, November 25, 1997: US05691794 (76 worldwide citation)

A liquid crystal display device comprised of picture element electrodes provided on a first plane of a substrate and an opposed electrode placed opposedly to the picture element electrodes, between which a liquid crystal is carried, characterized in that in a region of the substrate corresponding to ...


8
Hiroshi Yuzurihara, Mamoru Miyawaki, Akira Ishizaki, Genzo Momma, Tetsunobu Kochi: Process for manufacturing a semiconductor device by applying a non-single-crystalline material on a sidewall inside of an opening portion for growing a single-crystalline semiconductor body. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, March 18, 1997: US05612230 (68 worldwide citation)

An insulated gate type transistor includes a plurality of major electrode regions, a channel region provided between the plurality of major electrode regions, a gate electrode provided on the channel region with a gate insulating film therebetween, and a semiconductor region provided in contact with ...


9
Mahito Shinohara, Shigetoshi Sugawa, Seiji Hashimoto, Mamoru Miyawaki: Photoelectric conversion apparatus without isolation regions. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, October 9, 1990: US04962412 (67 worldwide citation)

A photoelectric conversion apparatus having an array of plural photoelectric conversion cells having semiconductor areas for accumulating photo-induced carriers, in which a gate-insulated transistor is formed with main electrodes composed of the semiconductor areas of neighboring photoelectric conve ...


10
Takao Yonehara, Mamoru Miyawaki, Akira Ishizaki, Junichi Hoshi, Masaru Sakamoto, Shigetoshi Sugawa, Shunsuke Inoue, Toru Koizumi, Tetsunobu Kohchi, Kiyofumi Sakaguchi, Takanori Watanabe: Liquid crystal image display unit and method for fabricating semiconductor optical member. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, June 25, 1996: US05530266 (66 worldwide citation)

A liquid crystal image display unit created on a substrate non-transparent to the light in the visible radiation area, characterized in that a portion beneath a liquid crystal pixel part on said substrate is removed, so that the light is made transmissive through said liquid crystal pixel part.



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