1
Shunpei Yamazaki, Jun Koyama, Mai Osada: Light-emitting device. Semiconductor Energy Laboratory, Fish & Richardson P C, June 24, 2003: US06583776 (93 worldwide citation)

There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is &mgr;, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs


2
Shunpei Yamazaki, Jun Koyama, Mai Osada: Light-emitting device. Semiconductor Energy Laboratory, Fish & Richardson P C, October 31, 2006: US07129917 (90 worldwide citation)

There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is μ, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs(max), a channel width is W, a channel length is L, an average value ...


3
Jun Koyama, Kazutaka Inukai, Shunpei Yamazaki, Mai Osada: Electro-optical device. Semiconductor Energy Laboratory, Cook Alex McFarron Manzo Cummings & Mehler, March 29, 2005: US06872973 (61 worldwide citation)

An electro-optical device having a plurality of pixels including a plurality of EL elements, wherein the electro-optical device provides a gray scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period; the plurality of the EL elements hav ...


4
Shunpei Yamazaki, Jun Koyama, Mai Osada: Light emitting device and method of manufacturing the same. Semiconductor Energy Laboratory, Fish & Richardson P C, August 23, 2005: US06933533 (55 worldwide citation)

There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manu ...


5
Akira Tsunoda, Shunpei Yamazaki, Jun Koyama, Mai Osada: Transistor provided with first and second gate electrodes with channel region therebetween. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, May 25, 2004: US06740938 (55 worldwide citation)

This invention is intended to provide a technique for improving characteristics of a TFT and realizing a structure of the TFT optimum for driving conditions of a pixel section and a driving circuit by using a small number of photomasks. The TFT includes a first electrode, a first insulating film put ...


6
Shunpei Yamazaki, Jun Koyama, Mitsuaki Osame, Mai Osada: Display device. Semiconductor Energy Laboratory, Fish & Richardson P C, May 22, 2007: US07221338 (52 worldwide citation)

The present invention is intended to suppress power consumption of an EL display. In accordance with the brightness of an image to be displayed in a pixel portion, the contrast of the image is determined whether to be inverted or not, and the number of bits of the digital video signal to be input in ...


7
Shunpei Yamazaki, Jun Koyama, Mai Osada: Light-emitting device. Semiconductor Energy Laboratory, Fish & Richardson P C, August 9, 2011: US07995010 (41 worldwide citation)

There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is μ, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs(max), a channel width is W, a channel length is L, an average value ...


8
Shunpei Yamazaki, Jun Koyama, Mitsuaki Osame, Mai Osada: Display device. Semiconductor Energy Laboratory, Fish & Richardson P C, November 24, 2009: US07623098 (37 worldwide citation)

The present invention is intended to suppress power consumption of an EL display. In accordance with the brightness of an image to be displayed in a pixel portion, the contrast of the image is determined whether to be inverted or not, and the number of bits of the digital video signal to be input in ...


9
Shunpei Yamazaki, Mai Osada: Thin film transistor with plural channels and corresponding plural overlapping electrodes. Semiconductor Energy Laboratory, Nixon Peabody, Jeffrey L Costéllia, June 14, 2005: US06906344 (36 worldwide citation)

An object of the present invention is to provide a technique for improving characteristics of a TFT and realizing the structure of the TFT optimal for driving conditions of a pixel section and a driving circuit, using a smaller number of photo masks. A semiconductor device has a semiconductor film, ...


10
Shunpei Yamazaki, Jun Koyama, Mai Osada: Light-emitting device. Semiconductor Energy Laboratory, Fish & Richardson P C, July 23, 2013: US08493295 (31 worldwide citation)

There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is μ, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs(max), a channel width is W a channel length is L, an average value ...