1
Lyons Christopher F, Babcock Carl P, Kye Jongwook: Immersion lithographic process using a conforming immersion medium. Advanced Micro Devices, Lyons Christopher F, Babcock Carl P, Kye Jongwook, DRAKE Paul S, July 7, 2005: WO/2005/062128 (361 worldwide citation)

A method of making a device using a lithographic system (10) having a lens (32) from which an exposure pattern (24) is emitted. A conforming immersion medium (26) can be positioned between a photo resist layer (34) and the lens. The photo resist layer, which can be disposed over a wafer, and the len ...


2
Brunsvold William R, Hefferon George J, Lyons Christopher F, Moreau Wayne M, Wood Robert L: Top antireflective coating films.. Ibm, January 13, 1993: EP0522990-A1 (21 worldwide citation)

Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer fo ...


3
Deutsch Albert S, Lyons Christopher F, Piller Robert: Positive-working, radiation- sensitive compositions and elements. Polychrome, June 2, 1983: GB2109573-A (9 worldwide citation)

Positive-acting, radiation- sensitive compositions, for instance for photolithographic plates, which change colour on exposure to radiation comprise a dyestuff and an alkyl ester of o-naphthoquinone-(1 or 2)-diazide-4-sulphonic acid.


4
Klymko Paul W, Lyons Christopher F, Moreau Wayne M: Process for masking and resist formation.. Ibm, October 15, 1986: EP0197519-A2 (5 worldwide citation)

A method of producing image masks comprising, in one embodiment providing enhanced opacity in a novolac based imaging mask by providing a substrate with a deep bottom U.V. resist bottom layer sensitive to wavelengths in the range from 200 to below 280 nm which can either be an aqueous base developab ...


5
Bonser Douglas J, Plat Marina V, Yang Chih Yuh, Bell Scott A, Chan Darin A, Fisher Philip A, Lyons Christopher F, Chang Mark S, Gao Pei Yuan, Wright Marilyn I, You Lu, Dakshina Murthy Srikanteswara: Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication. Advanced Micro Devices, sCOLLOPY Daniel R, February 5, 2004: WO/2004/012246 (3 worldwide citation)

A hardmask stack is comprised of alternating layers of doped amorphous carbon (22) and undoped amorphous carbon (20). The undoped amorphous carbon layers (20) serve as buffer layers that constrain the effects of compressive stress within the doped amorphous carbon layers (22) to prevent delamination ...


6
Kye Jongwook, Babcock Carl P, Lyons Christopher F: Pellicle for a lithographic lens. Advanced Micro Devices, Kye Jongwook, Babcock Carl P, Lyons Christopher F, DRAKE Paul S, September 15, 2005: WO/2005/085956 (2 worldwide citation)

Disclosed are a method and apparatus for preventing contamination in a lithographic apparatus (10) including a projection system (24). The lithographic apparatus (10) images an irradiated portion of a mask (22) onto a target portion (40) of a substrate (28). A pellicle (32, 36) is placed with respec ...


7
Deutsch Albert S, Lyons Christopher F, Piller Robert: Revelateur ameliore pour articles photolithographiques positifs. Polychrome, April 8, 1983: FR2514160-A1 (1 worldwide citation)

L'INVENTION CONCERNE UN REVELATEUR ALCALIN PERFECTIONNE COMPRENANT UNE SUBSTANCE BASIQUE.LE PERFECTIONNEMENT SELON L'INVENTION COMPREND L'ADDITION D'UN SEL NEUTRE D'UN CATION DE METAL ALCALIN OU D'UN CATION D'AMMONIUM QUATERNAIRE, A LA CONDITION QUE LE SEL NEUTRE NE SOIT PAS NACL LORSQUE LA SUBSTANC ...


8
Tabery Cyrus E, Lyons Christopher F: Method of using an amorphous carbon layer for improved reticle fabrication. Advanced Micro Devices, sCOLLOPY Daniel R, January 15, 2004: WO/2004/006014 (1 worldwide citation)

A method of using an amorphous carbon layer (130) for improved reticle fabrication includes depositing a stack of layers including a substrate (110), an absorber (120), a transfer layer (130), an anti­reflective coating (ARC) layer (140), and a photoresist layer (150), patterning (45) the photoresis ...


9
Tripsas Nicholas, Buynoski Matthew S, Pangrle Suzette, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, April 19, 2006: GB2419231-A

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


10
Oglesby Jane V, Lyons Christopher F, Subramanian Ramkumar, Hui Angela T, Ngo Minh Van, Pangrle Suzette: Spin on polymers for organic memory devices. Advanced Micro Devices, December 14, 2005: GB2415092-A

A method of making organic memory cells (104) made of two electrodes (106, 108) with a controllably conductive media (110) between the two electrodes (106, 108) is disclosed. The controllably conductive media (110) contains an organic semiconductor layer (112) and passive layer (114). The organic se ...



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