1
Chiaretta Frank L, Luisi James A, Sypherd Allen D: Laser encoding of diode arrays. North American Rockwell Corporation, June 8, 1971: US3584183 (33 worldwide citation)

A method and means for encoding a silicon-on-sapphire diode array by bombarding selected diodes or diode connections with a pulsed laser beam to burn away chosen silicon and metallization areas. Removal of these areas from the diode matrix constitutes an encoding process by elimination of the select ...


2
Luisi James A, Fomenko Sergei M: Fingerprint minutiae reading device. North American Rockwell Corporation, October 5, 1971: US3611290 (21 worldwide citation)

A fingerprint is observed, a small portion at a time, using a flying spot scanner, whose spot travels along a predetermined path at each position to provide an electrical analog signal indicative of the nature of the fingerprint at each position. The analog signal is converted into digital form and ...


3
Padgett Clarence W, Street Dana C, Luisi James A: Circuit de sortie de memoire, Memory output circuit. Rockwell International Corporation, February 27, 1979: CA1049655

Abstract of the Invention A unique memory output integrated circuit is disclosedincluding a memory output driver having an output terminalat which data may be read, a gated power amplifier, and asingle ended multiplexer stage which, in the preferredembodiment, is adapted to be interfaced with a rand ...


4
Padgett Clarence W, Street Dana C, Luisi James A: Dispositif cmos a grande vitesse, commande par horloge et peu couteux pour fonctions logiques, High speed-low cost, clock controlled cmos logic implementation. Rockwell International Corporation, November 14, 1978: CA1042519

HIGH SPEED-LOW COST, CLOCK CONTROLLED CMOS LOGIC IMPLEMENTATION ABSTRACT OF THE DISCLOSURE A uniquely arranged, clock-controlled integratedcircuit is disclosed as a building block for implementing Boolean logic functions. The circuit provides a source forsupplying a plurality of reference potentials ...


5
Luisi James A, Street Dana C, Padgett Clarence W: Cellule de memoire rapide, High speed memory cell. Rockwell International Corporation, May 15, 1979: CA1054714

HIGH SPEED MEMORY CELL Abstract of the Disclosure An improved very high speed, static random accessmemory cell is disclosed which is comprised of complementarymetal oxide semiconductor field effect transistors which maybe formed by silicon on sapphire techniques. To maximizethe speed of the read ope ...