1
Hormazdyar M Dalal, Majid Ghafghaichi, Lucian A Kasprzak, Hans Wimpfheimer: Method for fabricating tantalum semiconductor contacts. International Business Machines Corporation, David M Bunnell, Thomas F Galvin, July 29, 1980: US04215156 (107 worldwide citation)

A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pre ...


2
Charles T Ryan, Roy E Scheuerlein, Lucian A Kasprzak: Dynamic random access memory having separated V.sub.DD pads for improved burn-in. International Business Machines Corporation, Sughrue Mion Zinn Macpeak and Seas, July 2, 1985: US04527254 (23 worldwide citation)

A random access memory, a method of manufacturing a random access memory, and a method of testing a random access memory in which separate operating voltage terminal pads are provided for the memory cell arrays and peripheral circuits of the memory. By providing separate operating voltage terminal p ...


3
Hormazdyar M Dalal, Majid Ghafghaichi, Lucian A Kasprzak, Hans Wimpfheimer: Tantalum semiconductor contacts and method for fabricating same. International Business Machines Corporation, David M Bunnell, Thomas F Galvin, July 22, 1980: US04214256 (18 worldwide citation)

A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pre ...