Lowrey Tyler A, Lee Ruojia: One-time, voltage-programmable, read-only memory array having memory cell igfets, each of which is coupled to a reference voltage line via an anti-fuse element.. Micron Technology, February 24, 1993: EP0528417-A2 (23 worldwide citation)

A one-time, voltage-programmable, read-only memory array in which individual memory cells comprise an insulated-gate, field-effect transistor, the channel of which provides, through a voltage-programmable anti-fuse element, a current path between a reference voltage line (34) and a bitline (48 + 49) ...

Lowrey Tyler A, Parkinson Ward D: Method and system to store information. Ovonyx, TROP Timothy N, July 1, 2004: WO/2004/055827 (22 worldwide citation)

Briefly, in accordance with an embodiment of the invention, a method and system to program a memory material is provided. The method may include applying three signals having different durations and different amplitudes to a memory material to program the memory material to a predetermined state.

Lowrey Tyler A: Phase change access device for memories. Ovonyx, TROP Timothy N, February 24, 2005: WO/2005/017904 (8 worldwide citation)

A memory may have access devices formed using a chalcogenide material. The access device does not induce a snapback voltage sufficient to cause read disturbs in the associated memory element being accessed. In the case of phase change memory elements, the snapback voltage may be less than the thresh ...

Lowrey Tyler A: Phase change material memory device. Intel Corporation, November 1, 2003: TW559915 (5 worldwide citation)

A phase change material memory cell (10) may be formed with singulated, cup-shaped phase change material (18). The interior of the cup-shaped phase change material (18) may be filled with a thermal insulating material (22). As a result, heat losses upwardly through the phase change material (18) may ...

Doan Trung T, Lowrey Tyler A, Cathey David A, Rolfson J Brett: Method to form self-aligned gate structures and focus rings.. Micron Technology, September 8, 1993: EP0559156-A1 (4 worldwide citation)

A selective etching and chemical mechanical planarization process for the formation of self-aligned gate 15 and focus ring 19 structures surrounding an electron emission tip 13 for use in field emission displays in which the emission tip 13 is i) optionally sharpened through oxidation, ii) conformal ...

Chiang Chien, Dennison Charles H, Lowrey Tyler A: Forming phase change memories. Ovonyx, TROP Timothy N, July 1, 2004: WO/2004/055825 (4 worldwide citation)

Phase change memories (10) may exhibit improved properties and lower cost in some cases by forming the phase change material layers (14) in a planar configuration. A heater (16) may be provided below the phase change material layers (44) to appropriately heat the material (14) to induce the phase ch ...

Hudgens Stephen J, Lowrey Tyler A: Modified contact for programmable devices. Ovonyx, TROP PRUNER 8554 Katy Freeway Suite 100 Houston TX 77024, February 26, 2004: WO/2004/017437 (3 worldwide citation)

In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric (210) exposing a contact (170) formed on a substrate (110). The resistivity of the contact is modified by at least ...

Lowrey Tyler A: Programming a phase-change material memory. Ovonyx, Lowrey Tyler A, TROP Timothy N, March 25, 2004: WO/2004/025659 (3 worldwide citation)

The memory device has constituent cells (604) which include a structural phase-change material to store the cell's data. This material may be, for instance, a chalcogenide alloy. A first pulse (204) is applied to the cell (604) to leave the material in a first state, such as a reset state in which t ...

Asano Isamu, Lowrey Tyler A: Non-volatile memory element and manufacturing method thereof. Elpida Memory, May 24, 2007: JP2007-129200 (3 worldwide citation)

PROBLEM TO BE SOLVED: To enhance the heat generating efficiency of a non-volatile memory element, provided with a recording layer containing a phase changing material.SOLUTION: The memory element is provided with a bottom electrode 12; a top electrode 17 provided on the bottom electrode 12; and a re ...

Parkinson Ward D, Lowrey Tyler A: Memory and access devices. Ovonyx, TROP Timothy N, July 1, 2004: WO/2004/055828 (2 worldwide citation)

Briefly, in accordance with an embodiment of the invention, a memory (100) is provided. The memory (100) may include a memory element (130) and a first access device (120) coupled to the memory element (130), wherein the first access device (120) comprises a first chalcogenide material (940). The me ...