1
Yan Li, Long Pham: Method for programming of multi-state non-volatile memory using smart verify. Sandisk Corporation, Vierra Magen Marcus & DeNiro, November 27, 2007: US07301817 (108 worldwide citation)

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a high ...


2
Yan Li, Long Pham: Apparatus for programming of multi-state non-volatile memory using smart verify. Sandisk Corporation, Vierra Magen Marcus & DeNiro, April 29, 2008: US07366022 (16 worldwide citation)

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a high ...


3
Yan Li, Long Pham: Method for programming of multi-state non-volatile memory using smart verify. SanDisk Corporation, Vierra Magen Marcus & DeNiro, February 17, 2009: US07492634 (13 worldwide citation)

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a high ...


4
Loc Tu, Jian Chen, Alex Mak, Tien Chien Kuo, Long Pham: Programmable chip enable and chip address in semiconductor memory. SanDisk Corporation, Vierra Magen Marcus & DeNiro, May 11, 2010: US07715255 (13 worldwide citation)

Memory die are provided with programmable chip enable circuitry to allow particular memory die to be disabled after packaging and/or programmable chip address circuitry to allow particular memory die to be readdressed after being packaged. In a multi-chip memory package, a memory die that fails pack ...


5
Loc Tu, Jian Chen, Alex Mak, Tien Chien Kuo, Long Pham: Systems for programmable chip enable and chip address in semiconductor memory. SanDisk Corporation, Vierra Magen Marcus & DeNiro, January 13, 2009: US07477545 (11 worldwide citation)

Memory die are provided with programmable chip enable circuitry to allow particular memory die to be disabled after packaging and/or programmable chip address circuitry to allow particular memory die to be readdressed after being packaged. In a multi-chip memory package, a memory die that fails pack ...


6
Jea Hyun, James Peterson, Long Pham, John Strasser, Hairong Sun, Kapil Verma: Storage operation interrupt. SANDISK TECHNOLOGIES, Kunzler PC, April 3, 2018: US09933950

Apparatuses, systems, methods, and computer program products are disclosed for interrupting storage operations. A frequency module is configured to determine a frequency for pausing a storage operation. An interrupt module is configured to pause execution of a storage operation according to a determ ...


7
Jea Hyun, James Peterson, Long Pham, John Strasser, Hairong Sun, Kapil Verma: Storage operation interrupt. SANDISK TECHNOLOGIES, Kunzler PC, October 2, 2018: US10089021

Apparatuses, systems, methods, and computer program products are disclosed for interrupting storage operations. An integrated circuit chip comprising non-volatile memory, the integrated circuit chip configured to, determine a number of portions into which a storage operation is to be split; pause ex ...


8
Yan Li, Long Pham: Apparatus for programming of multi-state non-volatile memory using smart verify. Vierra Magen Sandisk Corporation, May 3, 2007: US20070097747-A1

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a high ...


9
Yan Li, Long Pham: Method for programming of multi-state non-volatile memory using smart verify. Vierra Magen Sandisk Corporation, May 3, 2007: US20070097749-A1

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a high ...


10
Yan Li, Long Pham: Method for programming of multi-state non-volatile memory using smart verify. Vierra Magen Sandisk Corporation, January 17, 2008: US20080013374-A1

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a high ...