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Gary Fong, Li Qun Xia, Srinivas Nemani, Ellie Yieh: Methods and apparatus for cleaning surfaces in a substrate processing system. Applied Materials, Townsend and Townsend and Crew, September 22, 1998: US05812403 (205 worldwide citation)

The present invention provides a method for cleaning a processing chamber. According to a specific embodiment, the method includes steps of depositing a dielectric film on a wafer on a ceramic heater in the processing chamber in a first time period, with the ceramic heater heated to a first temperat ...


2
Frederic Gaillard, Li Qun Xia, Tian Hoe Lim, Ellie Yieh, Wai Fan Yau, Shin Puu Jeng, Kuowei Liu, Yung Cheng Lu: Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition. Applied Materials, Moser Patterson & Sheridan, September 30, 2003: US06627532 (184 worldwide citation)

A method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and dep ...


3
Srinivas Nemani, Li Qun Xia, Ellie Yieh: Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers. Applied Materials, Moser Patterson & Sheridan, October 15, 2002: US06465366 (163 worldwide citation)

A method for forming a silicon carbide layer for use in integrated circuit fabrication is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and an inert gas in the presence of an electric field. The electric field is generated usin ...


4
Srinivas D Nemani, Li Qun Xia, Dian Sugiarto, Ellie Yieh, Ping Xu, Francimar Campana Schmitt, Jia Lee: Method of depositing dielectric films. Applied Materials, Moser Patterson & Sheridan, July 20, 2004: US06764958 (161 worldwide citation)

A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide ...


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Farhad K Moghadam, David W Cheung, Ellie Yieh, Li Qun Xia, Wai Fan Yau, Chi I Lang, Shin Puu Jeng, Frederic Gaillard, Shankar Venkataraman, Srinivas Nemani: Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound. Applied Materials, Moser Patterson & Sheridan, July 2, 2002: US06413583 (151 worldwide citation)

A method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400° C. The low dielectric constant films contain residual carbon and are useful for gap fill layers, pre- ...


6
Li Qun Xia, Ellie Yieh: Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill. Applied Materials, Townsend and Townsend and Crew, January 7, 2003: US06503843 (149 worldwide citation)

An improved method of forming a dielectric layer over a substrate disposed in a substrate processing chamber and cleaning deposition material off the chamber's interior wall and surfaces. The method breaks an in-situ chamber cleaning operation that is commonly performed after film deposition in ...


7
Ping Xu, Li Qun Xia, Larry A Dworkin, Mehul Naik: Method of eliminating photoresist poisoning in damascene applications. Applied Materials, Moser Patterson & Sheridan, December 2, 2003: US06656837 (146 worldwide citation)

A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and car ...


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Frederic Gaillard, Li Qun Xia, Jen Shu, Ellie Yieh, Tian Hoe Lim: Process for forming a low dielectric constant carbon-containing film. Applied Materials, Townsend and Townsend and Crew, October 14, 2003: US06632478 (131 worldwide citation)

An embodiment of the present invention provides methods for forming a carbon-containing layer having a low dielectric constant and good gap-fill capabilities. A method includes depositing a carbon-containing layer on a substrate and transforming the carbon-containing layer to remove at least some of ...


9
Reza Arghavani, Michael Chiu Kwan, Li Qun Xia, Kang Sub Yim: Method for producing gate stack sidewall spacers. Applied Materials, Patterson & Sheridan, August 7, 2007: US07253123 (129 worldwide citation)

A method for forming sidewall spacers on a gate stack by depositing one or more layers of silicon containing materials using PECVD process(es) on a gate structure to produce a spacer having an overall k value of about 3.0 to about 5.0. The silicon containing materials may be silicon carbide, oxygen ...


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