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Richard A Ferguson, Mark A Lavin, Lars W Liebmann, Alfred K Wong: Process window based optical proximity correction of lithographic images. International Business Machines Corporation, Peter W Peterson, Tiffany L Townsend, DeLio & Peterson, June 10, 2003: US06578190 (217 worldwide citation)

A method of creating a pattern for a mask adapted for use in lithographic production of features on a substrate. The method comprises initially providing a mask pattern of a feature to be created on the substrate using the mask. The method then includes establishing target dimensional bounds of the ...


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Lars W Liebmann, Scott Mansfield, Alfred K Wong: Method to determine optical proximity correction and assist feature rules which account for variations in mask dimensions. International Business Machines Corporation, Todd M C Li, Whitham Curtis & Christofferson P C, April 22, 2003: US06553559 (204 worldwide citation)

Optical proximity correction (OPC) and assist feature rules are generated using a process window (PW) analysis. A reference pitch is chosen and the mask bias is found that optimizes the process window. This can be done using standard process window analysis or through a weighted process window (WPW) ...


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Lars W Liebmann, Scott J Bukofsky, Ioana Graur: Generating mask patterns for alternating phase-shift mask lithography. International Business Machines Corporation, Todd M C Li, January 31, 2006: US06993741 (183 worldwide citation)

A method of generating patterns of a pair of photomasks from a data set defining a circuit layout to be provided on a substrate includes identifying critical segments of the circuit layout to be provided on the substrate. Block mask patterns are generated and then legalized based on the identified c ...


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Ronald L Gordon, Ioana C Graur, Lars W Liebmann: Pliant SRAF for improved performance and manufacturability. International Business Machines Corporation, Todd M C Li, Hoffman Warnick & D Alessandro, October 3, 2006: US07115343 (147 worldwide citation)

A method for increasing coverage of subresolution assist features (SRAFs) in a layout. A set of possible SRAF placement and sizing rules for a given pitch is provided, ranked according to some figure of merit. During SRAF placement, the fit of a plurality of different SRAF solutions is successively ...


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Xu Ouyang, Geng Han, Lars W Liebmann: Placement and optimization of process dummy cells. International Business Machines Corporation, Ian D MacKinnon, Howard M Cohn, July 17, 2012: US08225255 (79 worldwide citation)

A method for laying out process dummy cells in relationship to inside memory cells of a memory array includes (a) calculating an initial process performance parameter for the memory array; (b) changing dummy cell layout configuration for a layer electrically connected to inside cells; (c) applying l ...


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Kanak B Agarwal, Shayak Banerjee, Praveen Elakkumanan, Lars W Liebmann: Electrically-driven optical proximity correction to compensate for non-optical effects. International Business Machines Corporation, Libby Z Toub, Jack V Musgrove, January 24, 2012: US08103983 (74 worldwide citation)

A contour of a mask design for an integrated circuit is modified to compensate for systematic variations arising from non-optical effects such as stress, well proximity, rapid thermal anneal, or spacer thickness. Electrical characteristics of a simulated integrated circuit chip fabricated using the ...


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Lars W Liebmann: Vertex minimization in a smart optical proximity correction system. International Business Machines Corporation, Charles W Peterson Jr, Whitham Curtis Whitham & McGinn, September 3, 1996: US05553274 (61 worldwide citation)

An optical proximity correction (OPC) routine that enhances the fidelity of VLSI pattern transfer operations such as photolithography and reactive ion etch (RIE) by predistorting the mask while biasing only critical features and eliminating, as much as possible, the creation of additional vertices. ...


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Lars W Liebmann: Vertex minimization in a smart optical proximity correction system. International Business Machines Corporation, Charles W Peterson Jr, Whitham Curtis Whitham & McGinn, September 3, 1996: US05553273 (59 worldwide citation)

An optical proximity correction (OPC) routine that enhances the fidelity of VLSI pattern transfer operations such as photolithography and reactive ion etch (RIE) by predistorting the mask while biasing only critical features and eliminating, as much as possible, the creation of additional vertices. ...



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