1
Lars S Carlson, Shulai Zhao, John Sheridan, Alan Mollet: Fabrication of low leakage-current backside illuminated photodiodes. Digirad Corporation, Fish & Richardson P C, December 30, 2003: US06670258 (76 worldwide citation)

Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of t ...


2
Lars S Carlson, Shulai Zhao, John Sheridan, Alan Mollet: Fabrication of low leakage-current backside illuminated photodiodes. Digirad Corporation, Fish & Richardson P C, May 11, 2004: US06734416 (65 worldwide citation)

Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of t ...


3
Lars S Carlson, Shulai Zhao, Richard Wilson: Indirect back surface contact to semiconductor devices. Digirad Corporation, Fish & Richardson P C, January 7, 2003: US06504178 (60 worldwide citation)

A semiconductor imaging device is disclosed. The device includes a substrate having at least first and second surfaces opposing each other, and a circuit layer. The substrate is doped to exhibit a first conductivity type. The substrate includes a conducting layer, a region, and a plurality of doped ...


4
Lars S Carlson: Technique for suppression of edge current in semiconductor devices. Digirad Corporation, Fish & Richardson P C, January 13, 2004: US06677182 (38 worldwide citation)

A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted region at the edge of the semiconducto ...


5
Lars S Carlson, Shulai Zhao, John Sheridan, Alan Mollet: Fabrication of low leakage-current backside illuminated photodiodes. Digirad Corporation, Fish & Richardson P C, August 14, 2007: US07256386 (36 worldwide citation)

Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of t ...


6
Lars S Carlson, Shulai Zhao: Insulator/metal bonding island for active-area silver epoxy bonding. Digirad Corporation, Fish & Richardson P C, October 7, 2003: US06630735 (27 worldwide citation)

A semiconductor interconnection device having a semiconductor die, a plurality of epoxy bonds, and an array of insulating islands is disclosed. The semiconductor die has a plurality of conductive contacts. The plurality of epoxy bonds has a metallic substance such as silver. The epoxy bonds are conf ...


7
Joel Kindem, Lars S Carlson: Charge pump power supply with noise control. Digirad Corporation, Fish & Richardson P C, March 28, 2006: US07019783 (26 worldwide citation)

An embedded power supply for providing a voltage on a detector module within an imaging system provides the required potential to the module from charge stored on an output capacitor. Charge on the capacitor is replenished by injecting, commonly referred to as pumping, current into the capacitor by ...


8
Lars S Carlson: Technique for suppression of edge current in semiconductor devices. Digirad Corporation, Fish & Richardson P C, May 15, 2007: US07217953 (25 worldwide citation)

A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in the physically disrupted region at the edge of the semiconducto ...


9
Joel Kindem, Lars S Carlson: Capacitive bypass. Digirad Corporation, Law Ofc SC Harris, October 20, 2009: US07605397 (9 worldwide citation)

An indirect connection to and across a photodiode array. The backside contact is used as one portion which connects to a capacitor. The capacitor forms a shunt across the bulk substrate, thus shunting across the series resistance of the substrate, and reducing the series resistance.


10
Lars S Carlson, Shulai Zhao, John Sheridan, Alan Mollet: Fabrication of low leakage-current backside illuminated photodiodes. Digirad Corporation, Law Office SCHarris, August 26, 2008: US07417216 (1 worldwide citation)

Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of t ...