1
EUNKEE HONG
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec, March 21, 2006: US07015144 (5 worldwide citation)

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


2
EUNKEE HONG
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec PA, September 30, 2008: US07429637

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


3
Hongliang Shen, Kyutae Na, Sandeep Gaan, Hsin Neng Tai, Weihua Tong, Sang Cheol Han, Tae Hoon Kim, Ja Hyung Han, Haigou Huang, Changyong Xiao, Huang Liu, Seung Yeon Kim: Shallow trench isolation integration methods and devices formed thereby. GlobalFoundries, Williams Morgan P C, September 1, 2015: US09123771 (1 worldwide citation)

Aspects of the present invention generally relate to approaches for forming a semiconductor device such as a TSV device having a “buffer zone” or gap layer between the TSV and transistor(s). The gap layer is typically filled with a low stress thin film fill material that controls stresses and crack ...


4
Kyutae Na, Toshio Okuhara, Makoto Misono: Solid acid catalyst for paraffin conversion and process for paraffin conversion using the same. Nippon Oil Company, Armstrong Westerman Hattori McLeland & Naughton, May 12, 1998: US05750457

A solid acid catalyst for paraffin conversion which consists of an acid salt of a heteropoly acid being represented by the following general formula:


5
Hongliang Shen, Kyutae Na, Sandeep Gaan, Hsin Neng Tai, Weihua Tong, Sang Cheol Han, Tae Hoon Kim, Ja Hyung Han, Haigou Huang, Changyong Xiao, Huang Liu, Seung Yeon Kim: Shallow trench isolation integration methods and devices formed thereby. GLOBALFOUNDRIES, Williams Morgan P C, July 5, 2016: US09385192

Aspects of the present invention generally relate to approaches for forming a semiconductor device such as a TSV device having a “buffer zone” or gap layer between the TSV and transistor(s). The gap layer is typically filled with a low stress thin film fill material that controls stresses and crack ...


6
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Scott C Hatfield, Myers Bigel Sibley & Sajovec PA, August 19, 2004: US20040161944-A1

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


7
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Myers Bigel Sibley & Sajovec, May 4, 2006: US20060094243-A1

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...



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