1
Kwang Myoung Rho: Method for fabricating semiconductor device having a buried channel. Hyundai Electronics Industries Co, Thelen Reid & Priest, January 19, 1999: US05861334 (106 worldwide citation)

A method for fabricating a semiconductor device having a buried channel structure, in which impurities having the same conductive type as a well are ion implanted, to increase the ion density beneath the buried channel, thereby enhancing the short channel characteristic and smooth on/off characteris ...


2
Kwang Myoung Rho, Chan Kwang Park, Yo Hwan Koh: Method for forming multiple or modulated wells of semiconductor device. Hyundai Electronics, Blakely Sokoloff Taylor & Zafman, January 4, 2000: US06010926 (34 worldwide citation)

The present invention provide a method for forming a triple well. The triple well includes an n-well, a first p-well surrounded with the n-well and a second p-well apart from the first p-well and adjacent to the n-well. According to the present invention, only one conductivity type of impurities are ...


3
Yo Hwan Koh, Chan Kwang Park, Seong Min Hwang, Kwang Myoung Rho: Method for fabricating semiconductor devices having bit lines and storage node contacts. Hyundai Electronics, Ware Fressola Van Der Sluys & Adolphson, May 6, 1997: US05627095 (20 worldwide citation)

A method of manufacturing a semiconductor device, capable of securing an alignment margin between bit lines and a storage node contact is disclosed herein. The method includes: a depositing step of a first insulating layer on a semiconductor substrate of MOS structure; a forming step of a bit line p ...


4
Kwang Myoung Rho: Output driver for controlling slew rate in a semiconductor device. Hynix Semiconductor, Ladas & Parry, May 30, 2006: US07053679 (14 worldwide citation)

Disclosed is an output driver for a semiconductor device with an improved slew rate. The output driver comprises a first pre-driver receiving a first signal so as to output a second signal in which a slew rate is controlled, a second pre-driver receiving a third signal so as to output a fourth signa ...


5
Jeung Won Suh, Kwang Myoung Rho, Seong Min Hwang: Method for forming a transistor with a trench. Hyundai Electronics, Blakely Sokoloff Taylor & Zafman, December 2, 1997: US05693542 (12 worldwide citation)

A method for forming a transistor comprising the steps of: forming a trench in a substrate; filling an insulating layer in the lower portion of said trench except for the upper portion thereof; filling a conductive layer in the upper portion of said trench and on said insulating layer for a channel ...


6
Kwang Myoung Rho, Seong Min Hwang: Method for fabricating a semiconductor device having a shallow trench isolation structure. Hyundai Electronics, Jacobson Price Holman & Stern PLLC, May 18, 1999: US05904541 (9 worldwide citation)

A semiconductor device having a shallow trench isolation structure, where the upper part of the trench is broader than the lower part of it, comprises an insulating layer on the sidewalls of the upper part of the trench, another insulating layer buried in the trench for isolating semiconductor devic ...


7
Kwang Myoung Rho: Differential amplifier and bit-line sense amplifier adopting the same. Hynix Semiconductor, Marshall Gerstein & Borun, October 17, 2006: US07123531 (9 worldwide citation)

A bit-line sense amplifier is disclosed that includes switching elements to sequentially modify the sense amplifier to a negative feedback differential amplifier, a normal differential amplifier, a positive feedback differential amplifier, and a cross-coupled latch, in that order. The sense amplifie ...


8
Kwang Myoung Rho: Output driver for dynamic random access memory. Hynix Semiconductor, McDermott Will & Emery, March 3, 2009: US07498844 (7 worldwide citation)

An output driver includes a pre-pull up drive unit configured to perform a pre-pull up drive operation; a pre-pull down drive unit configured to perform a pre-pull down drive operation; a drive unit configured to perform a drive operation in response to outputs of the pre-pull up drive unit and the ...


9
Kwang Myoung Rho: Resistive memory apparatus, layout structure, and sensing circuit thereof. SK Hynix, William Park & Associates Patent, August 19, 2014: US08811059 (4 worldwide citation)

Provided is a resistive memory apparatus including a plurality of memory areas each including a main memory cell array coupled to a plurality of word lines and a reference cell array coupled to a plurality of reference word lines. Each of the memory areas shares a bit line driver/sinker with an adja ...


10
Kwang Myoung Rho: Circuit for generating power-up signal of semiconductor memory apparatus. Hynix Semiconductor, Venable, Jeffri A Kaminski, June 28, 2011: US07969212 (3 worldwide citation)

A power-up signal generating circuit of a semiconductor memory apparatus includes a current source unit configured to supply a current to a first node; a current sink unit configured to be turned on when the level of a divided voltage dividing an external voltage is equal to or higher than a predete ...