1
Harada Yuji, Hatakeyama Jun, Yoshihara Takao, Kusaki Wataru, Kobayashi Tomohiro, Hasegawa Koji, Maeda Kazunori: Polymer compound, resist material, and pattern-forming method. Shin Etsu Chem, May 15, 2008: JP2008-111103 (160 worldwide citation)

PROBLEM TO BE SOLVED: To provide a resist material suitable for good liquid-immersion lithography, and to provide a pattern-forming method.SOLUTION: The polymer compound contains general formulas in the figure, and has 1,000-500,000 Mw (weight average molecular weight). In the formulas, R1a, R1b and ...


2
Hatakeyama Jun, Yoshihara Takao, Harada Yuji, Kusaki Wataru: Resist material and patterning process using the same. Shin Etsu Chem, May 29, 2008: JP2008-122932 (125 worldwide citation)

PROBLEM TO BE SOLVED: To provide a resist material having good barrier performance to water, capable of suppressing dissolution of a resist film thereof in water, having a large backward contact angle to water, capable of eliminating liquid droplet residues, having excellent process applicability wi ...


3
Hatakeyama Jun, Kusaki Wataru, Takeda Takanobu, Watanabe Osamu: Polymer compound, positive-type resist material and pattern forming method using the same. Shin Etsu Chem, April 15, 2004: JP2004-115630 (33 worldwide citation)

PROBLEM TO BE SOLVED: To provide a positive-type resist material, particularly a chemically-amplified, positive-type resist material, having a high resolution, margin of exposure, a small difference between sparse and dense dimensions, and process adaptability, surpassing those of conventional posit ...


4
Takeda Takanobu, Watanabe Osamu, Hatakeyama Jun, Kusaki Wataru: Method for producing macromolecular compound, and resist material. Shin Etsu Chem, January 13, 2005: JP2005-008766 (27 worldwide citation)

PROBLEM TO BE SOLVED: To provide a method for producing a macromolecular compound suitable as a base resin of a positive type resist material having high sensitivity and high resolution exceeding those of a conventional positive-type resist material, also having exposure margin and process adaptabil ...


5
Osawa Yoichi, Watanabe Atsushi, Kusaki Wataru, Watanabe Satoshi, Nagata Takashi, Nagura Shigehiro: New onium salt, photoacid generator for resist material, resist material and patterning method. Shin Etsu Chem, May 8, 2001: JP2001-122850 (24 worldwide citation)

PROBLEM TO BE SOLVED: To obtain a chemical amplification type resist material having high resolution. SOLUTION: This onium salt is represented by general formula (1) [wherein R1 is a 1-10C stratght-chain, brunched or cyclic substituted or unsubstituted alkyl group or 6-14C substituted or unsubstitut ...


6
Ohsawa Youichi, Watanabe Jun, Kusaki Wataru, Watanabe Satoshi, Nagata Takeshi, Nagura Shigehiro: Onium salts, photoacid generators for resist compositions, and patterning process. Shinetsu Chemical Co, February 21, 2001: EP1077391-A1 (15 worldwide citation)

Onium salts of the formula (1) are novel. R is C1-10 alkyl or C6-14 aryl, R is H or C1-6 alkyl, p is an integer of 1 to 5, q is an integer of 0 to 4, p+q = 5, R is C1-10 alkyl or C6-14 aryl, M is a sulfur or iodine atom, and "a" is equal to 3 or 2. A chemical amplification type resist composition co ...


7
Harada Yuji, Hatakeyama Jun, Kusaki Wataru: Polymeric compound, resist material, and pattern forming method. Shin Etsu Chem, April 17, 2008: JP2008-088343 (13 worldwide citation)

PROBLEM TO BE SOLVED: To provide a resist material suppressing surface contact angles at low after developing and suppressing permeation of water in a liquid immersion exposure.SOLUTION: The resist material comprises a polymeric compound containing combined repeating units represented by general for ...


8
Hatakeyama Jun, Kusaki Wataru, Harada Yuji, Yoshihara Takao: Resist material and pattern forming method using it. Shin Etsu Chem, May 8, 2008: JP2008-107443 (5 worldwide citation)

PROBLEM TO BE SOLVED: To prevent (1) inter-mixing of the protective layer and the photoresist layer and prevent (2) defects by making the resist surface more hydrophilic after developing in an immersion lithography process which inserts water between the protective layer and the projection lens on t ...


9
Iida Makoto, Tamatsuka Masaro, Kusaki Wataru, Kimura Masanori, Muraoka Shozo: Method for producing low defect silicon single crystal doped with nitrogen. Shinetsu Handotai, December 22, 1999: EP0965662-A1 (4 worldwide citation)

There is disclosed a method for producing a silicon single crystal by growing the silicon single crystal by the Czochralski method, characterized in that the crystal is pulled at a pulling rate Ämm/minÜ within a range of from V1 to V1 + 0.062 x G while the crystal is doped with nitrogen during the g ...


10
Hatakeyama Jun, Kusaki Wataru, Yoshihara Takao, Harada Yuji: Resist material and patterning process using the same. Shin Etsu Chem, October 23, 2008: JP2008-257166 (4 worldwide citation)

PROBLEM TO BE SOLVED: To provide a resist material to be used for immersion lithography of microfabrication in the manufacturing process of a semiconductor device, or the like, and a resist pattern forming process using the same.SOLUTION: The resist material comprises a high molecular compound used ...