1
Fwu Iuan Hshieh, Mike F Chang, Kuo In Chen, Richard K Williams, Mohamed Darwish: High density trenched DMOS transistor. Siliconix incorporated, Norman R Klivans, Skjerven Morrill MacPherson Franklin & Friel, November 18, 1997: US05689128 (135 worldwide citation)

The cell density of a trenched DMOS transistor is increased by overcoming the problem of lateral diffusion of deep P+body regions. This problem is solved in three versions. In a first version, the deep P+body region is formed using a high energy implant into a single epitaxial layer. In a second ver ...


2
Deva N Pattanayak, Yuming Bai, Kyle Terrill, Christiana Yue, Robert Xu, Kam Hong Lui, Kuo In Chen, Sharon Shi: Super trench MOSFET including buried source electrode and method of fabricating the same. Siliconix incorporated, Silicon Valley Patent Group, February 27, 2007: US07183610 (70 worldwide citation)

In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes t ...


3
Deva N Pattanayak, Yuming Bai, Kyle Terrill, Christiana Yue, Robert Xu, Kam Hong Lui, Kuo In Chen, Sharon Shi: Super trench MOSFET including buried source electrode. Siliconix Incorporated, Patentability Associates, July 7, 2009: US07557409 (15 worldwide citation)

In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes t ...


4
Mohamed N Darwish, Frederick P Giles, Kam Hong Lui, Kuo In Chen, Kyle Terrill: Method for making trench MIS device with reduced gate-to-drain capacitance. Siliconix Incorporated, July 26, 2005: US06921697 (13 worldwide citation)

Trench MIS devices including a thick insulative layer at the bottom of the trench are disclosed, along with methods of fabricating such devices. An exemplary trench MOSFET embodiment includes a thick oxide layer at the bottom of the trench, with no appreciable change in stress in the substrate along ...


5
Karl Lichtenberger, Frederick P Giles, Christiana Yue, Kyle Terrill, Mohamed N Darwish, Deva Pattanayak, Kam Hong Lui, Robert Q Xu, Kuo in Chen: Self-aligned differential oxidation in trenches by ion implantation. Siliconix Incorporated, Patent Law Group, Rachel V Leiterman, March 14, 2006: US07012005 (11 worldwide citation)

In accordance with the present invention, a trench MOSFET is formed by creating a trench in a semiconductor substrate. A portion of either a side wall of the trench or the bottom of the trench is implanted with an implant species. An insulating layer is then grown overlying the bottom and side wall ...


6
Mohamed N Darwish, Frederick P Giles, Kam Hong Lui, Kuo In Chen, Kyle Terrill: Trench MIS device with reduced gate-to-drain capacitance. Siliconix Incorporated, Wagner Murabito & Hao, April 19, 2005: US06882000 (11 worldwide citation)

Trench MIS devices including a thick insulative layer at the bottom of the trench are disclosed, along with methods of fabricating such devices. An exemplary trench MOSFET embodiment includes a thick oxide layer at the bottom of the trench, with no appreciable change in stress in the substrate along ...


7
Mohamed N Darwish, Christiana Yue, Frederick P Giles, Kam Hong Lui, Kuo In Chen, Kyle Terrill, Deva N Pattanayak: Trench MIS device with graduated gate oxide layer. Siliconix incorporated, Silicon Valley Patent Group, June 7, 2005: US06903412 (10 worldwide citation)

The gate oxide layer of a trench MIS device includes a graduated transition region, where the thickness of the gate oxide layer decreases gradually from a thick section adjacent the bottom of the trench to a thin section adjacent the sidewall of the trench. The PN junction between the body and drain ...


8
Ben Chan, Kam Hong Lui, Christiana Yue, Ronald Wong, David Chang, Frederick P Giles, Kyle Terrill, Mohamed N Darwish, Deva Pattanayak, Robert Q Xu, Kuo in Chen: Thicker oxide formation at the trench bottom by selective oxide deposition. Siliconix Incorporated, Rachel V Leiterman, Patent Law Group, March 23, 2004: US06709930 (9 worldwide citation)

A trench MOSFET is formed by creating a trench in a semiconductor substrate, then forming a barrier layer over a portion of the side wall of the trench. A thick insulating layer is deposited in the bottom of the trench. The barrier layer is selected such that the thick insulating layer deposits in t ...


9
Deva Pattanayak, Kuo In Chen, The Tu Chau: High mobility power metal-oxide semiconductor field-effect transistors. Vishay Siliconix, September 6, 2016: US09437424 (7 worldwide citation)

High mobility P-channel power metal oxide semiconductor field effect transistors. In accordance with an embodiment of the present invention, a power MOSFET is fabricated such that the holes flow in an inversion/accumulation channel, which is along the (110) crystalline plane, or equivalents, and the ...


10
Deva N Pattanayak, Kyle Terrill, Sharon Shi, Misha Lee, Yuming Bai, Kam Lui, Kuo In Chen: Trench metal oxide semiconductor with recessed trench material and remote contacts. Vishay Siliconix, February 5, 2013: US08368126 (7 worldwide citation)

Remote contacts to the polysilicon regions of a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, as well as to the polysilicon regions of a MOS field effect transistor (MOSFET) section and of a TMBS section in a monolithically integrated TMBS and MOSFET (SKYFET) device, are emp ...