1
Masaki Matsui, Shoichi Yamauchi, Hisayoshi Ohshima, Kunihiro Onoda, Akiyoshi Asai, Takanari Sasaya, Takeshi Enya, Jun Sakakibara: Method for manufacturing a semiconductor substrate. Denso Corporation, Pillsbury Madison & Sutro, February 20, 2001: US06191007 (282 worldwide citation)

Methods for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layer on a substrate on which a buried pattern structure ...


2
Shoichi Yamauchi, Hisayoshi Ohshima, Masaki Matsui, Kunihiro Onoda, Tadao Ooka, Akitoshi Yamanaka, Toshifumi Izumi: Semiconductor substrate and method of manufacturing the same. Denso Corporation, Harness Dickey & Pierce, March 18, 2003: US06534380 (206 worldwide citation)

Before a semiconductor substrate and a base substrate is directly bonded to one another, in a protective film removing step, a contamination protective film formed on the semiconductor substrate to protect it from contamination during an ion implanting step is removed. Consequently, even when flatne ...


3
Hisayoshi Ohshima, Masaki Matsui, Kunihiro Onoda, Shoichi Yamauchi: Semiconductor substrate manufacturing method. Denso Corporation, Pillsbury Winthrop, June 26, 2001: US06251754 (156 worldwide citation)

The invention provides a number of semiconductor substrate manufacturing methods with which, in manufacturing a semiconductor substrate having a semiconductor layer in an insulated state on a supporting substrate, it is possible to obtain a thick semiconductor layer with a simple process and cheaply ...


4
Akihiko Teshigahara, Akiyoshi Asai, Kunihiro Onoda, Hiroyasu Itou, Ryuichirou Abe, Toshio Sakakibara: Semiconductor apparatus having high withstand voltage. Denso Corporation, Pillsbury Madison & Sutro, November 21, 2000: US06150697 (68 worldwide citation)

An island region surrounded by a trench is provided in an SOI substrate. The island region is further surrounded by a buffer region with a buffer region contact layer. In the island region, a source region is annularly provided around a drain region, and source and drain electrodes are respectively ...


5
Shoichi Yamauchi, Yasushi Urakami, Kunihiro Onoda, Toshio Sakakibara, Yoshinori Otsuka: Method for manufacturing semiconductor substrate having an epitaxial film in the trench. Denso Corporation, Law Offices of David G Posz, December 17, 2002: US06495294 (37 worldwide citation)

A trench is formed in a silicon substrate, and an epitaxial film is formed on the substrate and in the trench. After a part of the epitaxial film formed around an opening portion of the trench is etched, another epitaxial film is formed on the substrate and in the trench. Accordingly, the trench can ...


6
Kunihiro Onoda, Hideaki Nishikawa, Tetsuo Yoshioka: Method of manufacturing an electrostatic actuator. DENSO CORPORATION, Posz Law Group, February 24, 2009: US07494594 (1 worldwide citation)

An electrostatic actuator for increasing a swing (deflection angle) of a movable structure includes a laminate substrate in which a thin film silicon layer is formed on a silicon substrate through a buried insulating film and a torsion beam movable structure constructed with the thin film silicon la ...


7
Kunihiro Onoda, Hideaki Nishikawa, Tetsuo Yoshioka: Electrostatic actuator and manufacturing method of the same. Posz & Bethards, August 12, 2004: US20040155556-A1

An electrostatic actuator for increasing a swing (deflection angle) of a movable structure includes a laminate substrate in which a thin film silicon layer is formed on a silicon substrate through a buried insulating film and a torsion beam movable structure constructed with the thin film silicon la ...


8
Kunihiro Onoda, Hideaki Nishikawa, Tetsuo Yoshioka: Method of manufacturing an electrostatic actuator. Denso Corporation, Posz Law Group, April 5, 2007: US20070075033-A1

An electrostatic actuator for increasing a swing (deflection angle) of a movable structure includes a laminate substrate in which a thin film silicon layer is formed on a silicon substrate through a buried insulating film and a torsion beam movable structure constructed with the thin film silicon la ...



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