1
Kun Lin Wu, Horng Bor Lu: Method for preventing poisoned vias and trenches. United Microelectronics, Hickman Stephens & Coleman, January 11, 2000: US06013581 (42 worldwide citation)

A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an plasma treatment, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive material. ...


2
Juen Kuen Lin, Chien Hsin Lai, Peng Yih Peng, Edward Yang, Kun Lin Wu, Fu Yang Yu: Chemical-mechanical polishing pad. United Microelectronics, September 19, 2000: US06120366 (34 worldwide citation)

The invention provides a chemical-mechanical polishing pad, which includes a plurality of annular grooves and a plurality of streamline grooves designed according to principles of the hydrodynamics. The streamline grooves of polishing pad are designed according to flow equations derived from source ...


3
Kun Lin Wu, Meng Jin Tsai: Chemical-mechanical polishing method. United Microelectronics, Thomas Kayden Horstemeyer & Risley, June 20, 2000: US06077784 (31 worldwide citation)

A chemical-mechanical polishing process for forming a metallic interconnect includes the steps of providing a semiconductor substrate having a first metallic line thereon, and then forming a dielectric layer over the substrate and the first metallic line. Next, a chemical-mechanical polishing method ...


4
Kun Lin Wu, Horng Bor Lu: Method for preventing poisoned vias and trenches. United Microelectronics, Thomas Kayden Horstemeyer & Risley, June 6, 2000: US06071806 (28 worldwide citation)

A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an electron-beam process, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive mater ...


5
Kun Lin Wu, Chien Hsien Lai, Horng Bor Lu, Jenn Tarng Lin: Method of cleaning slurry remnants after the completion of a chemical-mechanical polish process. United Microelectronics Corporation, Oblon Spivak McClelland Maier & Neustadt P C, March 2, 1999: US05876508 (21 worldwide citation)

A method for effectively cleaning the slurry remnants left on a polishing pad after the completion of a chemical mechanical polish (CMP) process is provided. This method is able to substantially thoroughly clean away all of the slurry remnants left on the polishing pad. In the method of the inventio ...


6
Juen Kuen Lin, Chien Hsin Lai, Peng Yih Peng, Kun Lin Wu, Daniel Chiu, Chih Chiang Yang, Juan Yuan Wu, Hao Kuang Chiu: Chemical-mechanical polish machines and fabrication process using the same. United Microelectronics, Thomas Kayden Horstemeyer & Risley, September 25, 2001: US06293850 (15 worldwide citation)

A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurr ...


7
Juen Kuen Lin, Chien Hsin Lai, Peng Yih Peng, Kun Lin Wu, Daniel Chiu, Chih Chiang Yang, Juan Yuan Wu, Hao Kuang Chiu: Chemical-mechanical polish machines and fabrication process using the same. United Microelectronics, Thomas Kayden Horstemeyer & Risley, February 6, 2001: US06183350 (10 worldwide citation)

A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurr ...


8
Kun Lin Wu: Method for forming capacitor. United Microelectronics, Bacon & Thomas PLLC, March 6, 2001: US06197650 (8 worldwide citation)

A method for forming capacitor is proposed. The key point of the invention is that bottom plate and dielectric layer of capacitor are formed before metal interconnect is formed. Thus, thermal treatment of dielectric layer does not affect metal interconnect. Therefore, conventional fault that quality ...


9
Chi Jung Lin, Jyh J Huang, Horng Bor Lu, Kun Lin Wu: Method for preventing aluminum intrusions. United Microelectronics, Winston Hsu, December 25, 2001: US06333261 (6 worldwide citation)

A semiconductor wafer includes a substrate, an aluminum layer on the substrate, an anti-reflection coating on the aluminum layer, a dielectric layer on the anti-reflection coating, and a via hole that passes through the dielectric layer and the anti-reflection coating down to a predetermined depth w ...


10
Juen Kuen Lin, Chien Hsin Lai, Peng Yih Peng, Hao Kuang Chiu, Kun Lin Wu: Retainer ring design for polishing head of chemical-mechanical polishing machine. United Microelectronics, Christie Parker & Hale, May 16, 2000: US06062963 (5 worldwide citation)

A chemical-mechanical polishing machine having an improved wafer retainer ring design for the polishing head, comprising a polishing table, a polishing pad, a polishing head and a wafer retainer ring, wherein the polishing pad is above the polishing table, the polishing head is above the polishing p ...