1
Kubota Yoshihiro, Kawai Makoto, Mogi Hiroshi, Arai Ken Ichi, Kojima Shinji: Electrostatic chuck.. Shinetsu Chemical Co, September 30, 1992: EP0506537-A1 (16 worldwide citation)

Proposed is an electrostatic chuck having an integral five-layered structure and useful in holding and transporting, for example, a semiconductor silicon wafer in the manufacturing process of electronic devices, which is advantageous in respect of the rapidness of the working behavior, in particular ...


2
Sugimoto Kensho, Goto Yasutomo, Nakamura Tadashi, Fukushima Yoshiaki, Sugi Yoshihiro, Kubota Yoshihiro: Method for producing high crystal silica mesoporous thin film. Japan Chemical Innovation Institute, May 15, 2001: JP2001-130911 (12 worldwide citation)

PROBLEM TO BE SOLVED: To provide a method for producing a high crystal silica mesoporous thin film, by which the uniformity of pore arrangement can be enhanced in a wide area, even when the silica mesoporous material thin film is formed on a substrate not having a periodic property on the surface. S ...


3
Akiyama Shoji, Kubota Yoshihiro, Ito Atsuo, Kawai Makoto, Tobisaka Yuuji, Tanaka Koichi: Method for manufacturing soi substrate. Shinetsu Chemical Co, October 29, 2008: EP1986218-A1 (8 worldwide citation)

A hydrogen ion-implanted layer is formed on the surface side of a first substrate which is a single-crystal silicon substrate. At least one of the surface of a second substrate, which is a transparent insulating substrate, and the surface of the first substrate is subjected to surface activation tre ...


4
Yota Shiro, Kubota Yoshihiro, Tsuji Kazuto: Heat dissipation structure of electronic component and semiconductor device. Fujitsu, October 2, 2008: JP2008-235576 (8 worldwide citation)

PROBLEM TO BE SOLVED: To provide a versatile heat dissipation structure of electronic components of improved heat dissipation characteristics, as well as a semiconductor device.SOLUTION: Relating to the heat dissipation structure of an electronic component 35 that is mounted on a wiring substrate 31 ...


5
Akiyama Shoji, Kubota Yoshihiro, Ito Atsuo, Tanaka Koichi, Kawai Makoto, Tobisaka Yuuji: Method for manufacturing soi wafer. Shinetsu Chemical Co, December 3, 2008: EP1998368-A2 (7 worldwide citation)

There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby form ...


6
Akiyama Shoji, Kubota Yoshihiro, Ito Atsuo, Tanaka Koichi, Kawai Makoto, Tobisaka Yuuji: Method for manufacturing bonded substrate. Shin Etsu Chem, November 27, 2008: JP2008-288556 (7 worldwide citation)

PROBLEM TO BE SOLVED: To provide a method for manufacturing a bonded substrate that can be readily removed after being carried and mounted by roughening the back surface of the bonded substrate (corresponding to the back surface of an insulator substrate) when manufacturing the bonded substrate usin ...


7
Kubota Yoshihiro, Kashida Meguru, Kawaguchi Sakae, Nagata Yoshihiko, Hamada Yuichi, Shirasaki Toru: Frame-supported dustproof pellicle for photolithographic photomask.. Shinetsu Chemical Co, November 2, 1994: EP0622680-A2 (6 worldwide citation)

Proposed is a frame-supported pellicle used for dustproof protection of a photomask in the photolithographic patterning work for the manufacture of electronic fine devices such as LSIs, VLSIs and the like by mounting thereon. The inventive frame-supported pellicle is characterized in that the pellic ...


8
Akiyama Shoji, Shindo Toshihiko, Kubota Yoshihiro: Pellicle and method for fabrication thereof. Shinetsu Chemical Co, November 4, 2009: EP2113809-A1 (5 worldwide citation)

A silicon single crystal film having a crystal plane as its principal plane, the crystal plane being inclined at 3 to 5 DEG from any lattice plane belonging to {100} planes or {111} planes is used as a pellicle film (11). The silicon single crystal having such a crystal plane as its principal plane ...


9
AKIYAMA SHOJI, KUBOTA YOSHIHIRO: A pellicle film and a pellicle for EUV application, and a method for manufacturing the film, Pellikelmembran und Pellikel zur EUV-Anwendung und Verfahren zur Herstellung der Membran, Film de pellicule et pellicule pour application EUV et procédé de fabrication du film. SHINETSU CHEMICAL CO, July 18, 2012: EP2477072-A1 (5 worldwide citation)

An EUV pellicle film is provided, which is made from an SOI plate composed of a single crystal silicon membrane of a thickness of 20 nm to 1[mu]m and a handling plate (support structure) for reinforcing the membrane, the handling plate being firmly adhered to the single silicon member via a silicon ...


10
Akiyama Shoji, Kubota Yoshihiro, Ito Atsuo, Kawai Makoto, Tobisaka Yuuji, Tanaka Koichi: Manufacturing method of substrate for photoelectric conversion element. Shin Etsu Chem, September 27, 2007: JP2007-250575 (5 worldwide citation)

PROBLEM TO BE SOLVED: To provide a substrate for reducing the costs of a tandem-type photoelectric conversion element in an Si/Ge-based structure.SOLUTION: A silicon layer 10B of conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate 100, and a hydrogen ion is ...



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