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John E Campbell, William T Devine, Kris V Srikrishnan: Method and structure for buried circuits and devices. International Business Machines Corporation, International Business Machines Corporation, Dept 18g, December 12, 2002: US20020185684-A1

A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein ...


22
John J Altavilla, Alex Behfar, Nickolas E Kortesis, Kris V Srikrishnan: Electronic mail system for generating a mail message to multiple recipients with multiple attention levels. International Business Machines Corporation, George R Pettit, Connolly Bove Lodge & Hutz, December 19, 2002: US20020194280-A1

A process and apparatus for generating a mail message for multiple recipients which identify to a respective recipient an attention level. A list of addresses for the recipient is created along with a mail message to be sent to all of the recipients. Appended to each address is a tag representing an ...


23
Mark R Bilak, Gary C Dauser, Karen P Madden, Kris V Srikrishnan: System and method for valuing intellectual property. Jay H Anderson, IBM Corporation Dept 18G, November 24, 2005: US20050261927-A1

A method, system, and machine-readable medium having instructions recorded thereon are provided for valuing a current intellectual property (IP) transaction. The method includes providing IP data, financial data, and license data, the license data representing transactions other than the current IP ...


24
John E Campbell, William T Devine, Kris V Srikrishnan: Method and structure for buried circuits and devices. International Business Machines Corporation, Dept 18g, September 29, 2005: US20050214988-A1

A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein ...


25
John E Campbell, William T Devine, Kris V Srikrishnan: Method and structure for buried circuits and devices. Internation Business Machines Corporation, February 10, 2005: US20050029592-A1

A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein ...