1
Kris V Srikrishnan: Smart-cut process for the production of thin semiconductor material films. International Business Machines Corporation, Tiffany L Townsend, Ratner & Prestia, March 16, 1999: US05882987 (340 worldwide citation)

A process applicable to the production of monocrystalline films improves on the Smart-Cut.RTM. process by using an etch stop layer in conjunction with the Smart-Cut.RTM. process. Because of the etch stop layer, no chemical-mechanical polishing (CMP) is required after fabrication. Thus, the thickness ...


2
John E Campbell, William T Devine, Kris V Srikrishnan: Method and structure for buried circuits and devices. International Business Machines Corporation, Ira D Blecker, November 28, 2006: US07141853 (185 worldwide citation)

A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein ...


3
John E Campbell, William T Devine, Kris V Srikrishnan: Method and structure for buried circuits and devices. International Business Machines Corporation, Fred Gibb, Margaret A Pepper, McGinn & Gibb, July 6, 2004: US06759282 (115 worldwide citation)

A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein ...


4
David R Hanson, Hance H Huston III, Kris V Srikrishnan: Process for restoring rejected wafers in line for reuse as new. International Business Machines Corporation, Tiffany L Townsend, Ratner & Prestia, July 6, 1999: US05920764 (85 worldwide citation)

A process applicable to the restoration of defective or rejected semiconductor wafers to a defect-free form uses etchants and a variation of the Smart-Cut.RTM. process. Because of the use of the variation on the Smart-Cut.RTM. process, diffusion regions are removed without significantly affecting th ...


5
Stephen E Greco, Kris V Srikrishnan: Chip interconnection having a breathable etch stop layer. International Business Machines Corporation, December 6, 1994: US05371047 (53 worldwide citation)

An integrated circuit having organic dielectric between interconnection layers eliminates damage caused by vapors outgassing from the organic dielectric by the use of a two-component organic layer having a breathable etch resistant organic layer above the main organic dielectric layer, both of the o ...


6
James K Howard, Kris V Srikrishnan: Thin film capacitor with a dual bottom electrode structure. International Business Machines Corporation, Douglas A Lashmit, Mitchell S Bigel, September 11, 1984: US04471405 (34 worldwide citation)

A thin film capacitor having a dual bottom electrode is provided. The bottom electrode includes a first layer of metal and a second layer of platinum, the metal of the first layer having the characteristic of forming a stable intermetallic phase with platinum during heat treatment. The first layer m ...


7
Dominic J Schepis, Kris V Srikrishnan, Seshadri Subbanna, Manu J Tejwani: Antifuse element with electrical or optical programming. International Business Machines Corporation, Alison D Mortinger, Whitham Curtis Whitham & McGinn, January 16, 1996: US05485032 (33 worldwide citation)

A programmable antifuse element comprising adjacent bodies of germanium and aluminum or aluminum allow form a low resistance connection of good mechanical and thermal properties when heated to a temperature where alloying of the aluminum and germanium occurs. Heating for the purpose of programming t ...


8
Dominic J Schepis, Kris V Srikrishnan, Seshardi Subbanna, Manu J Tijwani: Method for forming an antifuse element with electrical or optical programming. International Business Machines Corporation, Whitham & Marhoefer, May 24, 1994: US05314840 (28 worldwide citation)

A programmable antifuse element comprising adjacent bodies of germanium and aluminum or aluminum alloy form forming a low resistance connection of good mechanical and thermal properties when heated to a temperature where alloying of the aluminum and germanium occurs. Heating for the purpose of progr ...


9
Kris V Srikrishnan, Jin J Wu: Aerosol cleaning method. International Business Machines Corporation, Richard Lau, December 13, 1994: US05372652 (27 worldwide citation)

An aerosol cleaning apparatus for cleaning a substrate includes an aerosol producing means having a nozzle head. The nozzle head is positioned at a selected proximity and orientation to the substrate which is held by a rotatable holder. The aerosol spray dislodges particles from the substrate and th ...


10
James K Howard, Kris V Srikrishnan: Thin film capacitor with a dual bottom electrode structure. International Business Machines Corporation, Mitchell S Bigel, December 27, 1983: US04423087 (25 worldwide citation)

A thin film capacitor having a dual bottom electrode is provided. The bottom electrode comprises a first layer of metal and a second layer of platinum, said metal of the first layer being of the nature of forming a stable intermetallic phase with the platinum during heat treatment. The metal of the ...