1
Kozo Arao, Yasushi Fujioka, Mitsuyuki Niwa, Eiji Takeuchi: Substrate having an uneven surface for solar cell and a solar cell provided with said substrate. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, September 14, 1993: US05244509 (56 worldwide citation)

A reflective solar cell substrate comprising a base member composed of a metallic material provided with irregularities at the surface thereof and a buffer layer disposed on said base member so as to cover the entire of said irregularities at the surface of said base member, said buffer layer being ...


2
Isamu Shimizu, Kozo Arao, Eiichi Inoue: Photoconductive member. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, December 25, 1984: US04490450 (37 worldwide citation)

A photoconductive member comprises a support for a photoconductive member and an amorphous layer having a layer constitution comprising a first layer region comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region comprising an amorphous material contai ...


3
Katsumi Nakagawa, Masahiro Kanai, Shunichi Ishihara, Kozo Arao, Yasushi Fujioka, Akira Sakai, Tsutomu Murakami: Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic %. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, September 25, 1990: US04959106 (32 worldwide citation)

A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional telluriu ...


4
Katsumi Nakagawa, Shunichi Ishihara, Kozo Arao, Yasushi Fujioka, Akira Sakai, Masahiro Kanai: Functional ZnSe:H deposited films. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, July 25, 1989: US04851302 (30 worldwide citation)

There is provided a functional ZnSe:H deposited film composed of zinc atoms, selenium atoms, and at least hydrogen atoms, with the content of hydrogen atoms being 1 to 4 atomic % and the ratio of crystal grains per unit volume being 65 to 85 vol %. It is capable of efficient doping and is stable to ...


5
Kazuharu Katagiri, Yoshihiro Oguchi, Takeshi Ohtake, Kozo Arao, Yoshio Takasu: Photoconductive film of azulenium salt and electrophotographic photosensitive member. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, December 16, 1986: US04629670 (28 worldwide citation)

Photoconductive films contain specified azulenium salt compounds. Electrophotographic photosensitive members are provided with a photoconductive film containing at least one of the specified azulenium salt compounds.


6
Kozo Arao, Tadashi Sato: Optical scanning device. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, June 18, 1985: US04523803 (28 worldwide citation)

A novel optical scanning device which utilizes the light integrating technique is provided. In the device, a light beam is deflected by forming a light deflecting portion and a condensing thin film lens on a thin film waveguide path and further, the deflected light is transmitted by a transmission p ...


7
Kazuhara Katagiri, Yoshihiro Oguchi, Takeshi Ohtake, Kozo Arao, Makoto Kitahara, Yoshio Takasu: Photoconductive film and electrophotographic photosensitive member contains azulenium salt. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, June 16, 1987: US04673630 (27 worldwide citation)

Photoconductive films contain specified azulenium salt compounds. Electrophotographic photosensitive members are provided with a photoconductive film containing at least one of the specified azulenium salt compounds.


8
Kozo Arao, Katsumi Nakagawa, Takaharu Kondo, Yukiko Iwasaki: Process for production of zinc oxide thin film, and process for production of semiconductor device substrate and process for production of photoelectric conversion device using the same film. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, September 8, 1998: US05804466 (27 worldwide citation)

A process for stably producing a zinc oxide thin film by electrolysis with excellent adhesion to a substrate is described. In particular, a zinc oxide thin film suitably used as a light confining layer of a photoelectric conversion element is formed on a conductive substrate by applying a current be ...


9
Kenji Yamagata, Hideya Kumomi, Hiroyuki Tokunaga, Kozo Arao: Method for forming semiconductor crystal and semiconductor crystal article obtained by said method. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, July 14, 1992: US05130103 (26 worldwide citation)

Semiconductor crystals are formed by applying a semiconductor crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) with metal having a sufficiently small area for crystal growth o ...


10
Katsumi Nakagawa, Shunichi Ishihara, Masahiro Kanai, Tsutomu Murakami, Kozo Arao, Yasushi Fujioka: Functional ZnSe.sub.1-x Te.sub.x :H deposited film. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, July 2, 1991: US05028488 (21 worldwide citation)

A functional ZnSe.sub.1-x Te.sub.x :H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio, hydrogen atoms are contai ...