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Kothandaraman Chandrasekharan, S Sundar Kumar: Programmable fuse device. Internatl Business Mach Corp &Lt IBM&Gt, April 8, 2004: JP2004-111959 (1 worldwide citation)

PROBLEM TO BE SOLVED: To obtain technical advantages as a device, system, and method of programming an electric fuse by using a transistor to which an active well bias is imparted.SOLUTION: In contrast to being grounded, a transistor (i.e. MOSFET) 33 operates through a well bias to program an electr ...


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Kothandaraman Chandrasekharan, Iyer S Sundar Kumar: Programming transistor in breakdown mode with current compliance. Infineon Technologies, International Business Machines Corporation, January 11, 2005: TWI226705 (1 worldwide citation)

A transistor (such as a MOSFET) is operated in its breakdown region, as opposed to its saturation region, to program an electric fuse. With the programming transistor operated in the breakdown region, a much higher current is enabled than the associated saturation current for the same size transisto ...


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BOOTH ROGER A JR, CHENG KANGGUO, KOTHANDARAMAN CHANDRASEKHARAN: [en] Fin anti-fuse with reduced programming voltage. IBM, April 18, 2012: GB2484634-A

[en] A method forms an anti-fuse structure comprises a plurality of parallel conductive fins positioned on a substrate, each of the fins has a first end and a second end. A second electrical conductor is electrically connected to the second end of the fins. An insulator covers the first end of the f ...


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Kothandaraman Chandrasekharan, Maciejewski Edward: (soi) Technology. Ibm, yujing liurui dong, October 24, 2007: CN200580040015

A fuse structure and method of forming the same is described, wherein the body of the fuse is formed from a crystalline semiconductor body on an insulator, preferably of a silicon-on-insulator wafer, surrounded by a fill-in dielectric. The fill-in dielectric is preferably a material that minimizes s ...


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Bonaccio Anthony R, Erickson Karl R, Fifield John A, Kothandaraman Chandrasekharan, Paone Phil C, Tonti William R: System and method for preventing unauthorized access to proprietatary information in ic device. Ibm, yu jing yang xiaoguang, June 21, 2006: CN200510114973

Techniques and systems whereby operation of and/or access to particular features of an electronic device may be controlled after the device has left the control of the manufacturer are provided. The operation and/or access may be provided based on values stored in non-volatile storage elements, such ...


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Kothandaraman Chandrasekharan: Electrical antifuse with external capacitance used for programming. Infineon Technologies, December 15, 2004: EP1485921-A2

An antifuse having a dielectric disposed between a plurality of conductive elements is programmed with one of the conductive elements connected to a capacitor. The antifuse is programmed to an "on" state by precharging the capacitor and then applying a programming voltage to another one of the condu ...


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Kothandaraman Chandrasekharan, Maciejewski Edward: (soi) Technology. Ibm, August 8, 2007: EP1815522-A2

A fuse structure and method of forming the same is described, wherein the body of the fuse is formed from a crystalline semiconductor body on an insulator, preferably of a silicon-on-insulator wafer, surrounded by a fill-in dielectric. The fill-in dielectric is preferably a material that minimizes s ...


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Kothandaraman Chandrasekharan: Optically and electrically programmable silicided polysilicon fuse device. Infineon Technologies, April 27, 2004: EP1412981-A1

A silicided polysilicon based fuse device that is programmable by optical and electrical energy in the polysilicon layer without damage to nearby structures, comprising: a Si substrate; an insulating layer disposed on the substrate; and a fuse device section comprising poly-Si/a silicide/ and a barr ...