1
Ng Sze Him, Korec Jacek, Giles Frederik: Trench gate mosfet and method of making the same. Siliconix, January 9, 2002: EP1170803-A2 (51 worldwide citation)

In a trench MOSFET a conductive shield gate is formed near the bottom of the trench. The shield gate is insulated from the overlying active gate and, depending on the use of the MOSFET, is connected to a constant voltage, such as ground. The shield gate reduces the capacitance between the active gat ...


2
Bhalla Anup, Pitzer Dorman, Korec Jacek, Shi Xiaorong, Lui Sik: Structures of and methods of fabricating trench-gated mis devices. Siliconix, October 8, 2003: EP1351313-A2 (17 worldwide citation)

In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper comers of the trench. Contact between the gate metal and the polysil ...


3
Xu Robert Q, Korec Jacek: Method of making a semiconductor device having trenches. Vishay Siliconix, March 31, 2004: EP1403914-A2 (11 worldwide citation)

A method for providing self aligned contacts for a trench power MOSFET is disclosed. The method includes, etching trenches (311,313) in a substrate (301) through a mask of silicon nitride (305) deposited on an oxide layer (303), forming a gate oxide layer (317) on the walls of the trenches, applying ...


4
Xu Robert Q, Korec Jacek: Method for providing self-arranging contact in semiconductor device. Vishay Siliconix, April 30, 2004: JP2004-134793 (9 worldwide citation)

PROBLEM TO BE SOLVED: To provide a method for providing a self-arranging contact for trench power MOSFET.SOLUTION: In this method, a polysilicon is applied to etch a trench on a substrate through an SiN mask deposited on a layer of oxides, to form a gate oxide layer on a wall of the trench and to co ...


5
Bhalla Anup, Kim Paul, Korec Jacek Dr: Mosfet and method of manufacturing the same. Siliconix, August 1, 2001: EP1120835-A2 (9 worldwide citation)

A MOSFET is fabricated in a silicon-on-insulator (SOI) chip having a relatively thin active layer (206) overlying an oxide intermediate layer (204) and a substrate layer (202). The MOSFET is a lateral device wherein contact is made to the source (212) from the back side of the chip by means of a con ...


6
Korec Jacek, Darwish Mohamed N, Pitzer Dorman C: High density trench gate power mosfet. Siliconix, May 11, 2001: JP2001-127292 (8 worldwide citation)

PROBLEM TO BE SOLVED: To provide power MOSFET which is difficult to be damaged with respect to a hot carrier and which has high packing density, and to provide the manufacturing method. SOLUTION: Trench gate power MOSFET comprises an area which is strongly doped in a body area where a drain and a PN ...


7
Loose Werner Dr, Korec Jacek Dr, Niemann Ekkehard Dipl Phys, Schlangenotto Heinrich Dr, Held Raban Dipl Phys: Vertical power field effect transistor. Daimler Benz, March 27, 1996: EP0703629-A2 (7 worldwide citation)

The high power vertical FET has a drain, drift, gate and source contacts mounted on a substrate, whereby its electrode arrangement is predominantly vertically implemented using a buried gate. The channel zone (5) is essentially arranged laterally along the buried gate zone (7) and connected via a th ...


8
Williams Richard K, Darwish Mohamed, Grabowski Wayne, Korec Jacek: Trench-gated mosfet with bidirectional voltage clamping. Siliconix, March 3, 1999: EP0899791-A2 (7 worldwide citation)

The gate of a MOSFET is located in a lattice of trenches which define a plurality of cells. Most of the cells contain a MOSFET, but a selected number of the cells at predetermined locations in the lattice contain either a PN diode or a Schottky diode. The PN and Schottky diodes are connected in para ...


9
Ng Sze Him, Giles Frederik, Korec Jacek: High-frequency mosfet and manufacturing method thereof. Siliconix, April 12, 2002: JP2002-110984 (7 worldwide citation)

PROBLEM TO BE SOLVED: To provide a trench MOSFET together with its manufacturing method where an operation ability at a high frequency is improved.SOLUTION: Related to the trench MOSFET, a conductive shield gate is formed near the lower part of a trench, while insulated from an active gate on which ...


10
Goldberger Haim, Lui Sik, Korec Jacek, Kasem Y Mohammed, Wong Harianto, Van Den Heuvel Jack: High-accuracy high-frequency capacitor formed on semiconductor board. Vishay Intertechnology, June 21, 2002: JP2002-176106 (5 worldwide citation)

PROBLEM TO BE SOLVED: To provide a high-accuracy high-frequency capacitor which can be produced at a low cost.SOLUTION: A high-accuracy high-frequency capacitor is equipped with a dielectric layer 104 formed on the front face of a semiconductor board 102, and a first electrode 106 is formed in the d ...