1
Mitsushi Ikeda, Manabu Tanaka, Masaki Atsuta, Akira Kinno, Kohei Suzuki, Norihiko Kamiura: X-ray semiconductor detector. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt P C, November 27, 2001: US06323490 (86 worldwide citation)

An X-ray semiconductor detector has a pixel array structure in which a plurality of pixel elements are arrayed in a matrix. Each pixel element includes an X-ray/charge conversion film for generating charges in accordance with an incident X-ray, a storage capacitor for storing the signal charges gene ...


2
Katsunori Komori, Osamu Yamamoto, Yoshinori Toyoguchi, Kohei Suzuki, Seiji Yamaguchi, Ayako Tanaka, Munehisa Ikoma: Hydrogen storage alloy and nickel-metal hydride storage battery using the same. Matsushita Electric Industrial, Panitch Schwarze Jacobs & Nadel, April 30, 1996: US05512385 (22 worldwide citation)

A hydrogen storage alloy for negative electrodes in an alkaline storage battery is disclosed. The alloy is represented by the general formula MmNi.sub.x M.sub.y, wherein Mm is a misch metal or a mixture of rare earth elements, and M is at least one element selected from the group consisting of Al, M ...


3
Tsumoru Ohata, Junji Nakajima, Tetsuya Hayashi, Takashi Takano, Shigeo Ikuta, Kohei Suzuki, Kouji Nishida, Masao Fukunaga, Akiko Fujino: Lithium ion secondary battery. Matsushita Electric Industrial, McDermott Will & Emery, July 8, 2008: US07396612 (17 worldwide citation)

A lithium ion secondary battery includes a positive electrode capable of absorbing and desorbing lithium ion, a negative electrode capable of absorbing and desorbing lithium ion, a porous film interposed between the positive electrode and the negative electrode, and a non-aqueous electrolyte: the po ...


4
Atsushi Sugahara, Norihiko Kamiura, Yutaka Nakai, Katsuyuki Naito, Kohei Suzuki: Liquid crystal display device. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt P C, August 4, 1998: US05790215 (16 worldwide citation)

This invention is a liquid crystal display device including a reflecting plate formed above a substrate, and a liquid crystal cell formed by alternately, repeatedly stacking a liquid crystal layer and a transparent electrode layer at least once on the reflecting plate, wherein the liquid crystal lay ...


5
Osamu Yamamoto, Katsunori Komori, Kohei Suzuki, Seiji Yamaguchi, Tadao Kimura, Munehisa Ikoma, Yoshinori Toyoguchi: Method for producing hydrogen storage alloy particles and sealed-type nickel-metal hydride storage battery using the same. Matsushita Electric Industrial, Panitch Schwarze Jacobs & Nadel P C, February 25, 1997: US05605585 (15 worldwide citation)

A method for manufacturing hydrogen storage alloy particles comprises steps of obtaining a melt of the hydrogen storage alloy and pulverizing the hydrogen storage alloy by water atomizing process, whereby the melt is pulverized by contacting or colliding with high-speed jetting thereto to be dispers ...


6
Takao Fujikawa, Yutaka Narukawa, Itaru Masuoka, Kohei Suzuki: Method for processing substrate. Kabushiki Kaisha Kobe Seiko Sho, Oblon Spivak McClelland Maier & Neustadt P C, April 24, 2001: US06221743 (15 worldwide citation)

The present invention provides a method for processing a substrate in which crystal defects occurring according to ion implantation can be prevented from being integrated to form defects such as dislocation or large vacancies in the manufacture of a SIMOX substrate by implanting oxygen atom to a Si ...


7
Kaoru Inoue, Kiyomi Kato, Kohei Suzuki, Shigeo Ikuta, Yusuke Fukumoto, Tetsuya Hayashi: Nonaqueous electrolyte secondary battery. Matsushita Electric Industrial, McDermott Will & Emery, September 9, 2008: US07422825 (12 worldwide citation)

A non-aqueous electrolyte secondary battery including: a positive electrode; a negative electrode; a separator interposed between the positive electrode and the negative electrode; a non-aqueous electrolyte; and a porous insulating film adhered to a surface of at least one selected from the group co ...


8
Takao Fujikawa, Yutaka Narukawa, Kohei Suzuki, Takuya Masui: Method of forming a wiring film. Kabushiki Kaisha Kobe Seiko, Oblon Spivak McClelland Maier & Neustadt P C, November 27, 2001: US06323120 (11 worldwide citation)

A method of forming an intact wiring film by applying a filling treatment with a metal material with no pores to holes/trenches, the method comprising forming a barrier layer


9
Kohei Suzuki: Memory cell for dynamic random access memory. Sharp Kabushiki Kaisha, June 15, 1993: US05219779 (10 worldwide citation)

A dynamic random access memory has a plurality of memory cells, each cell is defined by a substrate made of semiconductor material, a capacitor for storing data, a first transistor connected to one side of the capacitor. The first transistor is formed of a thin film transistor, and a second transist ...


10
Kohei Suzuki, Kazunori Kubota, Akira Kuroda, Motoi Kawamura, Masao Fukunaga, Tsumoru Ohata: Non-aqueous electrolyte secondary battery and positive electrode for the same. Matsushita Electric Industrial, Akin Gump Strauss Hauer & Feld, March 22, 2005: US06869724 (10 worldwide citation)

A non-aqueous electrolyte secondary battery comprises: a positive electrode sheet comprising a positive electrode mixture containing a lithium-containing transition metal oxide as an active material and a particulate binder; a negative electrode sheet comprising a negative electrode mixture containi ...