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Mano Toshihiko, Kodaira Toshimoto, Oshima Hiroyuki: A thin film mos transistor and an active matrix liquid crystal display device. Suwa Seikosha, October 26, 1983: GB2118365-A (58 worldwide citation)

A thin film MOS transistor includes a silicon layer (202) whose thickness, at least in the channel region is less than 2500 ANGSTROM . The silicon layer may be a polycrystalline silicon layer and its thickness in the channel region may be less than its thickness in the source and drain regions. Such ...


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Kodaira Toshimoto, Oshima Hiroyuki, Mano Toshihiko: A thin film transistor and an active matrix liquid crystal display device. Suwa Seikosha, January 11, 1984: GB2122419-A (3 worldwide citation)

A thin film transistor formed on an insulating substrate (8) comprises a source electrode (15) connected to a source region (10), a drain electrode (16) connected to a drain region (11) and a channel region 9 between the source region and the drain region. The channel region is substantially covered ...


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Oshima Hiroyuki, Kodaira Toshimoto, Mano Toshihiko: Thin layer transistor. Suwa Seikosha, December 28, 1984: FR2547955-A2

The invention relates to semiconductor technology. A thin layer transistor is formed by connecting in series on a substrate a set of thin layer transistors 1, 2, ..., N. The gate electrodes of all the elementary transistors are joined together to form a single common gate electrode G and the two end ...


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Mano Toshihiko, Kodaira Toshimoto, Oshima Hiroyuki: A thin film mos transistor and an active matrix liquid crystal display device. Suwa Seikosha, November 25, 1983: FR2527385-A1

A thin film MOS transistor includes a silicon layer (202) whose thickness, at least in the channel region is less than 2500 ANGSTROM . The silicon layer may be a polycrystalline silicon layer and its thickness in the channel region may be less than its thickness in the source and drain regions. Such ...


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Kodaira Toshimoto, Oshima Hiroyuki, Mano Toshihiko: A thin film transistor and an active matrix liquid crystal display device. Suwa Seikosha, February 24, 1984: FR2532116-A1

A thin film transistor formed on an insulating substrate (8) comprises a source electrode (15) connected to a source region (10), a drain electrode (16) connected to a drain region (11) and a channel region 9 between the source region and the drain region. The channel region is substantially covered ...


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Kodaira Toshimoto, Oshima Hiroyuki, Mano Toshihiko: Thin layer transistor and liquid crystal display device using this transistor.. Suwa Seikosha, January 27, 1984: FR2530868-A1

The invention relates to liquid crystal display devices. A thin layer MOS transistor intended for use in a liquid crystal display panel has a structure in which a transparent electrode 410 of a material such as indium-tin oxide passes through a gate insulation layer 403 so as to come directly into c ...


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Mano Toshihiko, Kodaira Toshimoto, Oshima Hiroyuki: A thin film mos transistor and an active matrix liquid crystal display device. Suwa Seikosha, May 18, 1984: FR2536194-A1

A thin film MOS transistor includes a silicon layer (202) whose thickness, at least in the channel region is less than 2500 ANGSTROM . The silicon layer may be a polycrystalline silicon layer and its thickness in the channel region may be less than its thickness in the source and drain regions. Such ...


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Kodaira Toshimoto, Fujimoto Satoshi, Sakai Kazuyoshi, Tsunekawa Yoshifumi: Inspection method of matrix structure, inspection device of matrix structure, and manufacturing method of matrix structure. Sanyo Epson Imaging Devices, September 28, 2006: JP2006-258712

PROBLEM TO BE SOLVED: To provide an inspection method of a matrix structure, inspection device of the matrix structure, and manufacturing method of the matrix structure capable of easily detecting a point-like defect caused by characteristic failure of a witching element or the like in a matrix stru ...