1
Larry R Lockwood, Kimberly R Gleason, Eric W Strid: Wafer probe. Cascade Microtech, Dellett Smith Hill & Bedell, September 29, 1987: US04697143 (193 worldwide citation)

A wafer probe is provided having metallic transmission lines mounted on a tapered alumina substrate generally surrounded by microwave absorbing material. The probe provides for on-wafer measurements of small planar devices at frequencies from DC to at least 18 GHz with low inductance, and with const ...


2
Jeremy Burr, Gregory Nordgren, Eric W Strid, Kimberly R Gleason: Coaxial wafer probe with tip shielding. Cascade Microtech, Chernoff Vilhauer McClung & Stenzel, October 15, 1996: US05565788 (140 worldwide citation)

A shielded microwave probe tip assembly includes an end of a coaxial cable coupled to probe fingers forming a coplanar controlled impedance microwave transmission line where the ground probe fingers are interconnected by a shield member that is spaced apart from the signal line probe finger but is p ...


3
Eric W Strid, Kimberly R Gleason: Wafer probe. Cascade Microtech, Dellett Smith Hill and Bedell, May 2, 1989: US04827211 (123 worldwide citation)

A wafer probe for accessing bonding pads on a planar device includes contact pads mounted on one edge of the under side of a dielectric substrate board and arranged to align with the bonding pads to be accessed. Coplanar ground and signal conductors deposited on the under side of the substrate board ...


4
Kimberly R Gleason, Eric W Strid, Robert T Flegal, Angus J McCamant: Wafer probes. TriQuint Semiconductor, John Smith Hill, William S Lovell, August 1, 1989: US04853627 (105 worldwide citation)

A wafer probe comprises a support member having an end region which is shaped to permit the end region to be brought into close proximity with a component under test. An amplifier is mounted on the support member at its end region. A conductive probe element is attached to the amplifier and is elect ...


5
William A Vetanen, Kimberly R Gleason, Irene G Beers: Self-aligned recessed gate process. Triquint Semiconductors, William S Lovell, Alexander C Johnson Jr, John D Winkelman, April 7, 1987: US04656076 (54 worldwide citation)

An integrated circuit gate process and structure are disclosed which provide a self-aligned, recessed gate enhancement-mode GaAsFET. The process includes making self-aligned implants prior to gate metallization, with an intermediate step of applying patches of plasma- and chemical-etch resistant die ...


6
William A Vetanen, Kimberly R Gleason, Irene G Beers: Source-side self-aligned gate process. Triquint Semiconductors, William S Lovell, Alexander C Johnson Jr, John D Winkelman, February 10, 1987: US04642259 (6 worldwide citation)

A self-aligned gate GaAsFET fabrication process and structure are disclosed in which the gate metallization is offset to one side of the channel aligned with the source-side implant. The arrangement is advantageously provided by a photolithographic fabrication process in which a pair of self-aligned ...