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Cheung Patrick K, Khathuria Ashok M: Self aligned memory element and wordline. Advanced Micro Devices, sCOLLOPY Daniel R, June 24, 2004: WO/2004/053930 (1 worldwide citation)

An organic polymer memory cell is provided having an organic polymer layer (116, 2108, 2132, 2168) and an electrode layer (120, 2112, 2128, 2164) formed over a first conductive (e.g., copper) layer (e.g., bitline) (104, 108). The memory cells are connected to a second conductive layer (e.g., forming ...


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Tripsas Nicholas, Buynoski Matthew S, Pangrle Suzette, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, April 19, 2006: GB2419231-A

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


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Fisher Philip A, Yang Chih Yuh, Plat Marina V, Callahan Russell R A, Khathuria Ashok M: Method of forming enhanced transistor gate using e-beam radiation and integrated circuit including this transistor gate. Advanced Micro Devices, January 2, 2004: EP1374289-A2

A process for forming a transistor (22, 32) having a gate width of less than 70mm is disclosed herein. The process includes E-beam radiation (12) a gate patterned (26, 36) on a photoresist layer, trimming (14) the gate patterned (26, 36) on the photoresist layer, and etching the gate patterned on th ...


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Cheung Patrick K, Khathuria Ashok M: Self aligned memory element and wordline. Advanced Micro Devices, September 7, 2005: EP1570533-A2

An organic polymer memory cell is provided having an organic polymer layer and an electrode layer formed over a first conductive (e.g., copper) layer (e.g., bitline). The memory cells are connected to a second conductive layer (e.g., forming a wordline), and more particularly the top of the electrod ...


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Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V, sCOLLOPY Daniel R, February 3, 2005: WO/2005/010892

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


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Fisher Philip A, Yang Chih Yuh, Plat Marina V, Callahan Russell R A, Khathuria Ashok M: Method of forming enhanced transistor gate using e-beam radiation and integrated circuit including this transistor gate. Advanced Micro Devices, sRODDY Richard J, October 3, 2002: WO/2002/078095

A process for forming a transistor (22, 32) having a gate width of less than 70mm is disclosed herein. The process includes E-beam radiation (12) a gate patterned (26, 36) on a photoresist layer, trimming (14) the gate patterned (26, 36) on the photoresist layer, and etching the gate patterned on th ...


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Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, ge bo cheng wei, August 16, 2006: CN200480019684

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...