1
Jian Chen, Tomoharu Tanaka, Yupin Fong, Khandker N Quader: Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states. SanDisk Corporation, Skjerven Morrill, February 18, 2003: US06522580 (759 worldwide citation)

A non-volatile memory system having an array of memory cells with at least one storage element each is operated with a plurality of storage level ranges per storage element. A flash electrically erasable and programmable read only memory (EEPROM) is an example, wherein the storage elements are elect ...


2
Raul Adrian Cernea, Khandker N Quader, Yan Li, Jian Chen, Yupin Fong: Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells. SanDisk Corporation, Parsons Hsue & de Runtz, August 24, 2004: US06781877 (310 worldwide citation)

Techniques of reducing erroneous readings of the apparent charge levels stored in a number of rows of memory cells on account of capacitive coupling between the cells. All pages of a first row are programmed with a first pass, followed by programming all pages of a second adjacent row with a first p ...


3
Jian Chen, Tomoharu Tanaka, Yupin Fong, Khandker N Quader: Multi-state nonvolatile memory capable of reducing effects of coupling between storage elements. SanDisk Corporation, Kabushiki Kaisha Toshiba, Parsons Hsue & de Runtz, October 19, 2004: US06807095 (209 worldwide citation)

A non-volatile memory system having an array of memory cells with at least one storage element each is operated with a plurality of storage level ranges per storage element. A flash electrically erasable and programmable read only memory (EEPROM) is an example, wherein the storage elements are elect ...


4
Raul Adrian Cernea, Khandker N Quader, Yan Li, Jian Chen, Yupin Fong: Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells. SanDisk Corporation, Parsons Hsue & de Runtz, March 22, 2005: US06870768 (116 worldwide citation)

Techniques of reducing erroneous readings of the apparent charge levels stored in a number of rows of memory cells on account of capacitive coupling between the cells. All pages of a first row are programmed with a first pass, followed by programming all pages of a second adjacent row with a first p ...


5
Jian Chen, Tomoharu Tanaka, Yupin Fong, Khandker N Quader: Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states. SanDisk Corporation, Kabushiki Kaisha Toshiba, Parsons Hsue & de Runtz, May 29, 2007: US07224613 (85 worldwide citation)

A non-volatile memory system having an array of memory cells with at least one storage element each is operated with a plurality of storage level ranges per storage element. A flash electrically erasable and programmable read only memory (EEPROM) is an example, wherein the storage elements are elect ...


6
John S Mangan, Daniel C Guterman, George Samachisa, Brian Murphy, Chi Ming Wang, Khandker N Quader: Method of reducing disturbs in non-volatile memory. SanDisk Corporation, Parson Hsue & de Runtz, April 6, 2004: US06717851 (71 worldwide citation)

In a non-volatile memory, the displacement current generated in non-selected word lines that results when the voltage levels on an array's bit lines are changed can result in disturbs. Techniques for reducing these currents are presented. In a first aspect, the number of cells being simultaneou ...


7
Khandker N Quader, Khanh T Nguyen, Feng Pan, Long C Pham, Alexander K Mak: Method and system for programming and inhibiting multi-level, non-volatile memory cells. SanDisk Corporation, Parsons Hsue & De Runtz, November 22, 2005: US06967872 (49 worldwide citation)

A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.


8
Jian Chen, Khandker N Quader: Read and erase verify methods and circuits suitable for low voltage non-volatile memories. January 4, 2005: US06839281 (44 worldwide citation)

In a non-volatile memory, the read parameter used to distinguish the data states characterized by a negative threshold voltage from the data states characterized by a positive threshold voltage is compensated for the memory's operating conditions, rather than being hardwired to ground. In an exempla ...


9
Jian Chen, Tomoharu Tanaka, Yupin Fong, Khandker N Quader: Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states. SanDisk Corporation, Kabushiki Kaisha Toshiba, Parsons Hsue & de Runtz, June 13, 2006: US07061798 (40 worldwide citation)

A non-volatile memory system having an array of memory cells with at least one storage element each is operated with a plurality of storage level ranges per storage element. A flash electrically erasable and programmable read only memory (EEPROM) is an example, wherein the storage elements are elect ...


10
Robert E Larsen, Khandker N Quader, Joseph H Salmon: Test mode enable scheme for memory. Intel Corporation, Blakely Sokoloff Taylor & Zafman, December 31, 1991: US05077738 (35 worldwide citation)

A test mode enable circuit in which a test mode code is written to one latch and a test mode enable code is written to a second latch. The test mode enable code is compared to preprogrammed values stored in the enable circuit. When the test mode enable code matches the preprogrammed value, a presenc ...