1
Kevin M Conley, John S Mangan, Jeffrey G Craig: Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks. Sandisk Corporation, Skjerven Morrill, July 30, 2002: US06426893 (388 worldwide citation)

A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in ...


2
Carlos J Gonzalez, Kevin M Conley: Flash memory data correction and scrub techniques. SanDisk Corporation, Parsons Hsue & de Runtz, March 14, 2006: US07012835 (348 worldwide citation)

In order to maintain the integrity of data stored in a flash memory that are susceptible to being disturbed by operations in adjacent regions of the memory, disturb events cause the data to be read, corrected and re-written before becoming so corrupted that valid data cannot be recovered. The someti ...


3
Kevin M Conley: Partial block data programming and reading operations in a non-volatile memory. SanDisk Corporation, Parsons Hsue & de Runtz, July 13, 2004: US06763424 (293 worldwide citation)

Data in less than all of the pages of a non-volatile memory block are updated by programming the new data in unused pages of either the same or another block. In order to prevent having to copy unchanged pages of data into the new block, or to program flags into superceded pages of data, the pages o ...


4
Sergey A Gorobets, Alan D Bennett, Peter J Smith, Alan W Sinclair, Kevin M Conley, Philip D Royall: Cyclic flash memory wear leveling. SanDisk Corporation, Davis Wright Tremaine, October 21, 2008: US07441067 (255 worldwide citation)

A re-programmable non-volatile memory system, such as a flash EEPROM system, having its memory cells grouped into blocks of cells that are simultaneously erasable is operated in a manner to level out the wear of the individual blocks through repetitive erasing and re-programming. This may be accompl ...


5
Sergey Anatolievich Gorobets, Reuven Elhamias, Carlos J Gonzalez, Kevin M Conley: Corrected data storage and handling methods. SanDisk Corporation, Parsons Hsue & de Runtz, February 6, 2007: US07173852 (214 worldwide citation)

In order to maintain the integrity of data stored in a flash memory that are susceptible to being disturbed by operations in adjacent regions of the memory, disturb events cause the data to be read, corrected and re-written before becoming so corrupted that valid data cannot be recovered. The someti ...


6
Yigal Brandman, Kevin M Conley: Nonvolatile memory with variable read threshold. SanDisk Corporation, Weaver Austin Villeneuve Sampson, July 7, 2009: US07558109 (198 worldwide citation)

Data is read from a nonvolatile memory array using one or more read voltages that are adjusted during memory life. Programming target voltages and read voltages may be adjusted together over memory life to map memory states to an increasingly wide threshold window. Individual memory states are mappe ...


7
Kevin M Conley, Yoram Cedar: Pipelined parallel programming operation in a non-volatile memory system. SanDisk Corporation, Parsons Hsue & de Runtz, March 22, 2005: US06871257 (151 worldwide citation)

The present invention allows for an increase in programming parallelism in a non-volatile memory system without incurring additional data transfer latency. Data is transferred from a controller to a first memory chip and a programming operation is caused to begin. While that first memory chip is bus ...


8
Shahzad B Khalid, Daniel C Guterman, Geoffrey S Gongwer, Richard Simko, Kevin M Conley: Writable tracking cells. SanDisk Corporation, Skjerven Morrill, March 25, 2003: US06538922 (148 worldwide citation)

The present invention presents several techniques for using writable tracking cells. Multiple tracking cells are provided for each write block of the memory. These cells are re-programmed each time the user cells of the associated write block are written, preferably at the same time, using the same ...


9
Carlos J Gonzalez, Kevin M Conley: Automated wear leveling in non-volatile storage systems. SanDisk Corporation, Parsons Hsue & de Runtz, October 10, 2006: US07120729 (122 worldwide citation)

Methods and apparatus for performing wear leveling in a non-volatile memory system are disclosed. Included is a method for performing wear leveling in a memory system that includes a first zone, which has a first memory element that includes contents, and a second zone includes identifying the first ...


10
Kevin M Conley, Reuven Elhamias: Flash controller cache architecture. SanDisk Corporation, Parsons Hsue & de Runtz, February 6, 2007: US07173863 (112 worldwide citation)

A buffer cache interposed between a non-volatile memory and a host may be partitioned into segments that may operate with different policies. Cache policies include write-through, write and read-look-ahead. Write-through and write back policies may improve speed. Read-look-ahead cache allows more ef ...