1
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process. Applied Materials, Robert J Stern, Philip A Dalton, March 19, 1991: US05000113 (566 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


2
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: CVD of silicon oxide using TEOS decomposition and in-situ planarization process. Applied Materials, Schlemmer Dalton Associates, October 10, 1989: US04872947 (351 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


3
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Process for PECVD of silicon oxide using TEOS decomposition. Applied Materials, Philip A Dalton, January 9, 1990: US04892753 (292 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


4
Kam S Law, Cissy Leung, Ching C Tang, Kenneth S Collins, Mei Chang, Jerry Y K Wong, David Nin Kou Wang: Reactor chamber self-cleaning process. Applied Materials, Philip A Dalton, October 2, 1990: US04960488 (281 worldwide citation)

A process for cleaning a reactor chamber both locally adjacent the RF electrodes and also throughout the chamber and the exhaust system to the including components such as the throttle valve. Preferably, a two-step continuous etch sequence is used in which the first step uses relatively high pressur ...


5
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Plasma-enhanced CVD process using TEOS for depositing silicon oxide. Applied Materials, Philip A Dalton, Robert J Stern, November 8, 1994: US05362526 (254 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


6
David Nin Kou Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process. Applied Materials, Birgit Morris, January 2, 2001: US06167834 (175 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


7
Kenneth S Collins, Craig A Roderick, John R Trow, Chan Lon Yang, Jerry Y Wong, Jeffrey Marks, Peter R Keswick, David W Groechel, Jay D Pinson II, Tetsuya Ishikawa, Lawrence C Lei, Masato M Toshima, Gerald Z Yin: Silicon scavenger in an inductively coupled RF plasma reactor. Applied Materials, Birgit Morris, Peter J Sgarbossa, September 17, 1996: US05556501 (162 worldwide citation)

A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy a ...


8
Kenneth S Collins, Joshua Chin Wing Tsui, Douglas Buchberger: Electrostatic chuck with an impregnated, porous layer that exhibits the Johnson-Rahbeck effect. Applied Materials, Eric Prahl, June 29, 1999: US05916689 (132 worldwide citation)

An electrostatic chuck including a pedestal having a conductive upper surface; and a layer of plasma-sprayed material formed on the upper surface of the pedestal and defining a surface onto which a substrate is placed during use, wherein the plasma-sprayed material exhibits the Johnson-Rahbeck effec ...


9
Jeffrey Marks, Kenneth S Collins, Chan Lon Yang, David W Groechel, Peter R Keswick: Selectivity for etching an oxide over a nitride. Applied Materials, Birgit E Morris, Charles S Guenzer, June 13, 1995: US05423945 (112 worldwide citation)

A method of etching an oxide over a nitride with high selectivity comprising plasma etching the oxide with a carbon and fluorine-containing etchant gas in the presence of a scavenger for fluorine, thereby forming a carbon-rich polymer which passivates the nitride. This polymer is inert to the plasma ...


10
Hoiman, Joseph P Caulfield, Hongqing Shan, Michael Rice, Kenneth S Collins, Chunshi Cui: Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon. Charles S Guenzer, Joseph Bach, September 28, 2004: US06797189 (112 worldwide citation)

A plasma etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. A primary fluorine-containing gas, preferably hexafluorobu ...