James C K Lau, Richard P Malmgren, Kenneth Lui: Testing device for integrated circuits on wafer. TRW, December 26, 1995: US05479109 (113 worldwide citation)

An electrical testing device is provided for testing integrated circuits located on a wafer. The testing device employs a multi-layer test circuit having a plurality of contacts for contacting the integrated circuits on a wafer. The layers of the test circuit are embedded in a flexible transparent d ...

James C K Lau, Kenneth Lui, James A Hathaway, Ronald A DePace: Low stress waveguide window/feedthrough assembly. TRW, July 4, 1995: US05430257 (25 worldwide citation)

An apparatus for mounting a waveguide window or conduction member into a housing such that a smooth gradient of the coefficient of thermal expansion exists between the housing and the window or conduction member, thereby reducing the internal stress which results from ambient temperature variations. ...

Hans G Mesch, Albert F Wollner, Charles E Gibson, Kenneth Lui: Interconnector attachment machine. TRW, Stuart O Lowry, Donald R Nyhagen, July 29, 1986: US04602417 (25 worldwide citation)

An integrated and automated multistation machine is provided for placement and attachment of electrically conductive interconnectors onto solar cells and the like. The machine comprises a rotatable turntable for supporting a plurality of solar cells in respective association with a corresponding plu ...

Roy M Acker, Kenneth Lui: Hermetic electrical feedthrough for aluminum housing and method of making same. The United States of America represented by the Secretary of the Air Force, Joseph E Rusz, Robert Kern Duncan, July 15, 1980: US04213004 (21 worldwide citation)

A leak-tight joint between a Kovar ceramic feed-through and an aluminum housing is obtained by electron beam welding a short length of the outside surface of the Kovar cylindrical shell of the feedthrough to a region of nickel deposited on a thin wall cylindrical tube of aluminum formed in the alumi ...

James C Lau, Kenneth Lui, Richard P Malmgren: Single crystal diamond wafer fabrication. TRW, Ronald L Taylor, March 1, 1994: US05290392 (14 worldwide citation)

This invention discloses a method of fabricating a plurality of diamond semiconductor wafers from a single crystal diamond semiconductor boule, where the diamond boule is grown by a chemical vapor deposition (CVD) process. Initially, a single crystal diamond seed is polished and an impurity layer is ...

James C Lau, Maurice Lowery, Kenneth Lui: Focused ion beam for thin film resistor trim on aluminum nitride substrates. TRW, Ronald L Taylor, November 30, 1993: US05266529 (10 worldwide citation)

A method for trimming thin film resistors. A focused inert ion beam is employed to selectively remove portions of a resistive film deposited on a substrate.

Kenneth Lui: Electrodeposition of nickel-iron alloys having a low temperature coefficient and articles made therefrom. TRW, Donald R Nyhagen, John J Connors, November 4, 1980: US04231847 (7 worldwide citation)

There is disclosed a method of electrodepositing, on a substrate, a substantially homogeneous admixture (alloy) of nickel and iron containing substantially no iron oxides and having a low temperature expansion coefficient. The method includes the steps of forming an aqueous electrolyte solution of n ...

James C Lau, Richard P Malmgren, Kenneth Lui: Integrated waveguide/stripline transition. TRW, Ronald L Taylor, May 10, 1994: US05311153 (6 worldwide citation)

An integrated waveguide/stripline signal transition structure and method for fabricating the same are provided for allowing high frequency signal transitions. The signal transition structure includes a waveguide which has a conductive cavity for guiding electromagnetic waves therethrough. A first co ...

Kenneth Lui: Optical reflector having a nickel-iron alloy reflecting surface. TRW, John J Connors, Donald R Nyhagen, May 19, 1981: US04268124 (5 worldwide citation)

There is disclosed an optical mirror consisting essentially of an electrodeposited nickel-iron face sheet having a relatively low temperature coefficient of expansion on a lightweight graphite backup substrate having approximately the same temperature coefficient of expansion as the electrodeposited ...