1
Kunihiko Miyamoto, Takeshi Fukuju, Ken Sugimoto: Alkali secondary battery. Toshiba Battery, Oblon Spivak McClelland Maier & Neustadt, April 9, 1996: US05506076 (30 worldwide citation)

This invention discloses an alkali secondary battery which includes a cadmium-free positive electrode whose swelling ratio is decreased, and in which the cycle characteristic is improved and the charge efficiency in use at high temperatures is also improved. This alkali secondary battery includes a ...


2
Kunihiko Miyamoto, Takeshi Fukuju, Ken Sugimoto: Alkali secondary battery. Toshiba Battery, Oblon Spivak McClelland Maier & Neustadt P C, January 13, 1998: US05707764 (16 worldwide citation)

This invention discloses an alkali secondary battery which includes a cadmium-free positive electrode whose swelling ratio is decreased, and in which the cycle characteristic is improved and the charge efficiency in use at high temperatures is also improved. This alkali secondary battery includes a ...


3
Shun ichi Fukuyama, Tamotsu Owada, Hiroko Inoue, Ken Sugimoto: Semiconductor device using low-k material as interlayer insulating film and including a surface modifying layer. Fujitsu, Westerman Hattori Daniels & Adrian, September 13, 2005: US06943431 (4 worldwide citation)

A semiconductor element is formed over a surface of a semiconductor substrate. A first insulating film is formed over the surface of the semiconductor substrate, the first insulating film covering the semiconductor element. A second insulating film is formed over the first insulating film, the secon ...


4
Ken Sugimoto, Yoshiyuki Ohkura, Hirofumi Watatani, Tamotsu Owada, Shunn ichi Fukuyama: Method of manufacturing semiconductor device. Fujitsu Semiconductor, Westerman Hattori Daniels & Adrian, July 6, 2010: US07749897 (2 worldwide citation)

A method of manufacturing a semiconductor device comprising a wiring structure that includes a vertical wiring section is disclosed. The method comprises a step of forming an interlayer insulation film made of a low dielectric constant material on a wiring layer, a step of forming a silicon oxide fi ...


5
Tamotsu Owada, Hirofumi Watatani, Ken Sugimoto, Shun ichi Fukuyama: Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device. Fujitsu, Westerman Hattori Daniels & Adrian, April 24, 2007: US07208405 (2 worldwide citation)

A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic ...


6
Ken Sugimoto, Yoshinobu Miyabe, Masaharu Udagawa, Takahiro Seki: Solid oxygen scavenger composition and process for producing the same. Mitsubishi Gas Chemical Company, Antonelli Terrry Stout & Kraus, September 13, 2011: US08017033 (1 worldwide citation)

A molded oxygen absorbent composition is composed of a molded product of an oxygen absorbent composition which contains an oxygen absorbing substance, water or moisture, and a swelling component capable of being swelled with water or moisture. The molded oxygen absorbent composition is reduced in it ...


7
Tamotsu Owada, Hirofumi Watatani, Ken Sugimoto, Shun ichi Fukuyama: Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device. Fujitsu Microelectronics, Westerman Hattori Daniels & Adrian, January 5, 2010: US07642185 (1 worldwide citation)

A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic ...


8
Haruaki Eto, Ken Sugimoto, Hidetoshi Hatakeyama: Iron powder-based oxygen-absorbing package and production method thereof. Mitsubishi Gas Chemical Company, Antonelli Terry Stout & Kraus, January 18, 2005: US06843040 (1 worldwide citation)

The oxygen-absorbing package of the present invention is produced by packaging an oxygen-absorbing composition comprising, as an effective component, an iron powder containing a fine iron powder passing through a 200-mesh standard sieve in an amount of 5% by weight or less by an air-permeable packag ...


9
Masahiro Fukuda, Ken Sugimoto, Masatoshi Nishikawa: Method of manufacturing semiconductor device. Fujitsu Semiconductor, Westerman Hattori Daniels & Adrian, December 11, 2012: US08329570 (1 worldwide citation)

A method of manufacturing a semiconductor device, comprising, forming a first gate electrode in a first region of a semiconductor substrate and forming a second gate electrode in a second region of the semiconductor substrate, forming a first sidewall along a lateral wall of the first gate electrode ...


10