1
Keizo Suzuki, Ken Ninomiya, Shigeru Nishimatsu, Sadayuki Okudaira, Osami Okada: Method and apparatus for surface treatment by plasma. Hitachi, Antonelli Terry & Wands, April 1, 1986: US04579623 (136 worldwide citation)

A gas is introduced into a vacuum chamber after the vacuum chamber is evacuated, and a plasma is generated within at least part of the vacuum chamber. The specimen surface is exposed to the plasma so that the surface is treated. A plurality of different gases, such as SF.sub.6, N.sub.2, and the like ...


2
Keizo Suzuki, Atsushi Hiraiwa, Shigeru Takahashi, Shigeru Nishimatsu, Ken Ninomiya, Sadayuki Okudaira: Method for growing silicon-including film by employing plasma deposition. Hitachi, Antonelli Terry & Wands, November 6, 1984: US04481229 (96 worldwide citation)

A method for growing a silicon-including film is disclosed in which the above film is grown on a surface of a substrate by using, as a discharge gas, a halogenide silicon gas or a gas mixture containing a halogenide silicon gas in a plasma deposition apparatus including a vacuum chamber, means for s ...


3
Hideo Todokoro, Kenji Takamoto, Tadashi Otaka, Fumio Mizuno, Satoru Yamada, Katsuhiro Kuroda, Ken Ninomiya, Tokuo Kure: Scanning electron microscope and method for production of semiconductor device by using the same. Hitachi, Fay Sharpe Beall Fagan Minnich & McKee, May 2, 1995: US05412210 (71 worldwide citation)

A technique for displaying a scanned specimen image permits non-destructive observation of a surface structure having large or precipitous unevenness, an internal structure of a specimen or a specific structure of a defect or foreign matter, which non-destructive observation has hitherto been consid ...


4
Ken Ninomiya, Hideo Todokoro, Tokuo Kure, Yasuhiro Mitsui, Katsuhiro Kuroda, Hiroyasu Shichi: Surface analysis method and apparatus for carrying out the same. Hitachi, Fay Sharpe Beall Fagan Minnich & McKee, January 2, 1996: US05481109 (61 worldwide citation)

A surface analysis method and an apparatus for carrying out the samein which the method involves the detection of fluorescence X-rays emitted from the surface of a sample in response to a finely focused electron beam irradiated thereto, whereby residues on the sample surface are analyzed qualitative ...


5
Ken Ninomiya, Keizo Suzuki, Shigeru Nishimatsu: Surface treatment apparatus. Hitachi, Antonelli Terry & Wands, June 11, 1985: US04522674 (56 worldwide citation)

A gas is introduced into a surface treatment chamber and is activated therein. The surface of a specimen placed in the surface treatment chamber is treated by using reactive species generated by this activation. A means of supplying controllable energy such as the energy of heat, light, or electron ...


6
Keizo Suzuki, Ken Ninomiya, Shigeru Nishimatsu, Osami Okada: Surface treatment apparatus. Hitachi, Antonelli Terry & Wands, February 20, 1990: US04901667 (48 worldwide citation)

A surface treatment apparatus comprising a vacuum chamber, means for introducing a gas into the vacuum chamber, a gas furnace for heating and activating the gas while it is being introduced, apertures for injecting the heated gas, and a substrate stage for holding a substrate of which the surface is ...


7
Hideo Todokoro, Kenji Takamoto, Tadashi Otaka, Fumio Mizuno, Satoru Yamada, Sadao Terakado, Katsuhiro Kuroda, Ken Ninomiya, Tokuo Kure: Scanning electron microscope and method for dimension measuring by using the same. Hitachi, Fay Sharpe Beall Fagan Minnich & McKee, January 14, 1997: US05594245 (37 worldwide citation)

An electron beam, which can transmit through part of a specimen and can reach a portion that is not exposed to the electron beam, is irradiated, and a scanning image is obtained on the basis of a signal secondarily generated from a portion irradiated with the electron beam. Dimension-measuring start ...


8
Shigeru Nishimatsu, Keizo Suzuki, Ken Ninomiya, Ichiro Kanomata, Sadayuki Okudaira, Hiroji Saida: Microwave plasma etching. Hitachi, Antonelli Terry & Wands, July 31, 1984: US04462863 (37 worldwide citation)

A microwave plasma etching system is disclosed which comprises a vacuum chamber for providing a discharge space and provided with an inlet for introducing a discharge gas containing a fluorine-containing gas, hydrogen and oxygen, magnetic field forming means for forming a magnetic field in the disch ...


9
Ken Ninomiya, Shigeru Nishimatsu, Keizo Suzuki, Sadayuki Okudaira, Yoshifumi Ogawa: Microwave plasma etching apparatus. Hitachi, Antonelli Terry & Wands, December 17, 1985: US04559100 (35 worldwide citation)

A microwave plasma etching apparatus comprises: a discharge tube into which a discharge gas is supplied and which forms a discharge region; means for generating a magnetic field in the discharge region; means for bringing a microwave into the discharge region; and a stage for holding a material. In ...


10
Hideo Todokoro, Kenji Takamoto, Tadashi Otaka, Fumio Mizuno, Satoru Yamada, Sadao Terakado, Katsuhiro Kuroda, Ken Ninomiya, Tokuo Kure: Scanning electron microscope and method for dimension measuring by using the same. Hitachi, Beall Law Offices, September 5, 2000: US06114695 (26 worldwide citation)

An electron beam which can transmit through part of a specimen and can reach a portion not exposing to the electron beam is irradiated and a scanning image is obtained on the basis of a signal secondarily generated from a portion irradiated with the electron beam. Dimension-measuring start and end p ...