1
Jon T Fitch, Papu Maniar, Keith E Witek, Jerry Gelatos, Reza Moazzami, Sergio A Ajuria: Method of forming a semiconductor structure having an air region. Motorola, Keith E Witek, June 28, 1994: US05324683 (406 worldwide citation)

A method for forming an air region or an air bridge overlying a base layer (12). Air regions (20a, 20b, 28a, and 48) are formed overlying the base layer (12) to provide for improved dielectric isolation of adjacent conductive layers, provide air-isolated conductive interconnects, and/or form many ot ...


2
Carlos A Mazure, Jon T Fitch, James D Hayden, Keith E Witek: Semiconductor memory device and method of formation. Motorola, Keith E Witek, May 3, 1994: US05308782 (178 worldwide citation)

A semiconductor memory device is formed having a substrate (12). A diffusion (14) is formed within the substrate (12). A first vertical transistor stack (122) is formed. A second vertical transistor stack (124) is formed. The first vertical transistor stack (122) has a transistor (100) underlying a ...


3
Jon T Fitch, Suresh Venkatesan, Keith E Witek: Integrated circuit having both vertical and horizontal devices and process for making the same. Motorola, Patricia S Goddard, September 10, 1996: US05554870 (176 worldwide citation)

An integrated circuit (10) has a vertical device, such as a transistor (71), formed by epitaxial growth from a substrate (12) and a horizontal device, such as a transistor (73, 75) grown epitaxially from the vertical device. In accordance with one embodiment of the invention, all six transistors of ...


4
Keith E Witek: Computerized facsimile (FAX) system and method of operation. Motorola, Keith E Witek, October 24, 1995: US05461488 (142 worldwide citation)

A fax system is automated herein by using a modem (10), a computer (12), and an office network which coupled the computer (12) to a plurality of end-user computers (26). A fax is received by the computer (12) through the modem (10). Once the fax is received by the computer (12), a program (14) store ...


5
Jon T Fitch, Papu Maniar, Keith E Witek, Jerry Gelatos, Reza Moazzami, Sergio A Ajuria: Semiconductor structure having an air region and method of forming the semiconductor structure. Motorola, Keith E Witek, April 23, 1996: US05510645 (121 worldwide citation)

A method for forming an air region or an air bridge overlying a base layer (12). Air regions (20a, 20b, 28a, and 48) are formed overlying the base layer (12) to provide for improved dielectric isolation of adjacent conductive layers, provide air-isolated conductive interconnects, and/or form many ot ...


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Keith E Witek, Mike Hsiao Hui Chen, Stephen Shiu Kong Poon: Capped shallow trench isolation and method of formation. Motorola, Keith E Witek, November 14, 2000: US06146970 (114 worldwide citation)

A method for forming a capped shallow trench isolation (CaSTI) structure begin by etching a trench opening (210). The opening (210) is filled with an oxide or like trench fill material (216b) via a deposition and chemical mechanical polish (CMP) step. The plug (216b) is reactive ion etched (RIE) to ...


8
Keith E Witek: Trench random access memory cell and method of formation. Motorola, Keith E Witek, March 9, 1999: US05879971 (91 worldwide citation)

A method for forming a random access memory cell within four separate trench regions (106, 108, 110, and 112). One half of the memory cell has a first N-type transistor, which is a latch transistor (500), has a current electrode (101), a current electrode (126), and a gate electrode (114). A second ...


9
Keith E Witek: Method for forming trench transistor structure. Motorola, Keith E Witek, January 6, 1998: US05705409 (86 worldwide citation)

A method for forming a trench transistor structure begins by forming a buried layers (12 and 16) and a doped well (22) in a substrate (10) via epitaxial growth processing. A trench region (24) is then etched into the substrate (10) to expose a the layer (12). A conductive sidewall spacer (28) is for ...


10
Keith E Witek: Method for growing an epitaxial layer of material using a high temperature initial growth phase and a low temperature bulk growth phase. Motorola, Keith E Witek, March 14, 2000: US06037202 (83 worldwide citation)

A method for forming a trench transistor structure begins by forming a buried layers (12 and 16) and a doped well (22) in a substrate (10) via epitaxial growth processing. A trench region (24) is then etched into the substrate (10) to expose a the layer (12). A conductive sidewall spacer (28) is for ...