1
Brian S Beaman, Fuad E Doany, Keith E Fogel, James L Hedrick Jr, Paul A Lauro, Maurice H Norcott, John J Ritsko, Leathen Shi, Da Yuan Shih, George F Walker: Three dimensional high performance interconnection package. International Business Machines Corporation, Daniel P Morris, December 6, 1994: US05371654 (318 worldwide citation)

The present invention is directed to a structure for packaging electronic devices, such as semiconductor chips, in a three dimensional structure which permits electrical signals to propagate both horizontally and vertically. The structure is formed from a plurality of assemblies. Each assembly is fo ...


2
Brian S Beaman, Keith E Fogel, Paul A Lauro, Maurice H Norcott, Da Yuan Shih, George F Walker: Test probe having elongated conductor embedded in an elostomeric material which is mounted on a space transformer. International Business Machines Corporation, Daniel P Morris, June 3, 1997: US05635846 (218 worldwide citation)

A high density test probe is for testing a high density and high performance integrated circuits in wafer form or as discrete chips. The test probe is formed from a dense array of elongated electrical conductors which are embedded in an compliant or high modulus elastomeric material. A standard pack ...


3
Brain S Beaman, Fuad E Doany, Keith E Fogel, James L Hedrick Jr, Paul A Lauro, Maurice H Norcott, John J Ritsko, Leathen Shi, Da Yuan Shih, George F Walker: Method of forming a three dimensional high performance interconnection package. International Business Machines Corporation, Daniel P Morris, July 2, 1996: US05531022 (212 worldwide citation)

The present invention is directed to a structure for packaging electronic devices, such as semiconductor chips, in a three dimensional structure which permits electrical signals to propagate both horizontally and vertically. The structure is formed from a plurality of assemblies. Each assembly is fo ...


4
Brian S Beaman, Keith E Fogel, Jungihl Kim, Wolfgang Mayr, Jane M Shaw, George F Walker: Connector assembly for chip testing. International Business Machines, Perman & Green, December 4, 1990: US04975079 (163 worldwide citation)

An electrical connector is described for making contact with a plurality of convex and deformable contacts on an electronic device. The electrical connector comprises a substrate having a plurality of conductors which extend above its surface. A polymeric material is disposed on the surface of the s ...


5
Keith E Fogel, Jeffrey C Hedrick, David A Lewis, Eva E Simonyi, Alfred Viehbeck, Stanley J Whitehair: Coaxial vias in an electronic substrate. International Business Machines Corporation, Daniel P Morris, July 30, 1996: US05541567 (103 worldwide citation)

Structures are described having vias with more than one electrical conductor at least one of which is a solid conductor which is formed by inserting the wire into the via in a substrate wherein the wire is attached to an electrically conductive plate which is spaced apart from the substrate by a spa ...


6
Levi A Campbell, Richard C Chu, Michael J Ellsworth Jr, Keith E Fogel, Madhusudan K Iyengar, Roger R Schmidt, Robert E Simons: Thermally conductive composite interface, cooled electronic assemblies employing the same, and methods of fabrication thereof. International Business Machines Corporation, Dennis Jung Esq, Kevin P Radigan Esq, Heslin Rothenberg Farley & Mesiti P C, June 28, 2011: US07967062 (73 worldwide citation)

A composite interface and methods of fabrication are provided for coupling a cooling assembly to an electronic device. The interface includes a plurality of thermally conductive wires formed of a first material having a first thermal conductivity, and a thermal interface material at least partially ...


7
Stephen W Bedell, Anthony G Domenicucci, Keith E Fogel, Effendi Leobandung, Devendra K Sadana: Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer. International Business Machines Corporation, Scully Scott Murphy & Presser, Robert M Trepp, January 31, 2006: US06991998 (64 worldwide citation)

A method of forming a semiconductor structure comprising a first strained semiconductor layer over an insulating layer is provided in which the first strained semiconductor layer is relatively thin (less than about 500 Å) and has a low defect density (stacking faults and threading defects). The meth ...


8
Keith E Fogel, Maurice H Norcott, Devendra K Sadana: Ultimate SIMOX. International Business Machines Corporation, Robert M Trepp Esq, Scully Scott Murphy & Presser, April 1, 2003: US06541356 (60 worldwide citation)

A method of forming a silicon-on-insulator (SOI) substrate having a buried oxide region that has a greater content of thermally grown oxide as compared to oxide formed by implanted oxygen ions is provided. Specifically, the inventive SOI substrate is formed by utilizing a method wherein oxygen ions ...


9
Paul D Agnello, Stephen W Bedell, Robert H Dennard, Anthony G Domenicucci, Keith E Fogel, Devendra K Sadana: Relaxed, low-defect SGOI for strained Si CMOS applications. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Robert M Trepp Esq, April 15, 2008: US07358166 (40 worldwide citation)

Thermal mixing methods of forming a substantially relaxed and low-defect SGOI substrate material are provided. The methods include a patterning step which is used to form a structure containing at least SiGe islands formed atop a Ge resistant diffusion barrier layer. Patterning of the SiGe layer int ...


10
Stephen W Bedell, Keith E Fogel, Paul A Lauro, Devendra Sadana: Thin substrate fabrication using stress-induced substrate spalling. International Business Machines Corporation, Robert J Eichelburg, The Law Offices of Robert J Eichelburg, August 21, 2012: US08247261 (40 worldwide citation)

A method for manufacturing a thin film direct bandgap semiconductor active solar cell device comprises providing a source substrate having a surface and disposing on the surface a stress layer having a stress layer surface area in contact with and bonded to the surface of the source substrate. Opera ...