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Kazuhiko Yamamoto, Yoshiaki Matsushita, Masaru Kanamori, Kazutoshi Nagasawa, Naotsugu Yoshihiro, Seigo Kishino: Method of forming nondefective zone in silicon single crystal wafer by two stage-heat treatment. VLSI Technology Research Association, Finnegan Henderson Farabow Garrett & Dunner, February 9, 1982: US04314595 (82 worldwide citation)

A silicon single crystal wafer is subjected to two-stage heat treatment. In the first-stage it is heated at a temperature within the range of between 500.degree. C. and 1,000.degree. C. Subsequently the thus heated wafer is heated at a temperature higher than that at the first stage. Thus, a nondefe ...


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Kazutoshi Nagasawa, Seigo Kishino, Yoshiaki Matsushita, Masaru Kanamori: Method of making fault-free surface zone in semiconductor devices by step-wise heat treating. VLSI Technology Research Association, Staas & Halsey, March 15, 1983: US04376657 (54 worldwide citation)

In a gettering method for processing semiconductor wafers a semiconductor wafer such as a silicon wafer is first annealed in a non-oxidizing atmosphere, for example, in a nitrogen atmosphere, at a temperature in the range of 950.degree. to 1,300.degree. C., preferably at 1,050.degree. C., for more t ...