1
Kanji Otsuka, Kazumichi Mitsusada, Masao Sekibata, Shinji Ohnishi: Semiconductor device including an alpha-particle shield. Hitachi, Antonelli Terry & Wands, September 10, 1985: US04541003 (181 worldwide citation)

The present invention relates to a semiconductor device having a semiconductor element which is sealed by a ceramic package, wherein a shielding member is provided near it from upper surface of the semiconductor element to shield the alpha-particles radiated from the package.


2
Kanji Otsuka, Kunizou Sahara, Masao Sekibata, Kazumichi Mitsusada, Katsumi Ogiue: Packaged semiconductor device structure including getter material for decreasing gas from a protective organic covering. VLSI Technology Research Association, Antonelli Terry & Wands, December 16, 1986: US04630095 (44 worldwide citation)

A packaged semiconductor device structure includes a semiconductor chip with an organic material covering thereon. The semiconductor chip is placed in a package and hermetically sealed with a low melting point glass. The organic covering serve to suppress undesirable influence on the semiconductor c ...


3
Hidetoshi Iwai, Kazumichi Mitsusada, Masamichi Ishihara, Tetsuro Matsumoto, Kazuyuki Miyazawa, Hisao Katto, Kousuke Okuyama: Method of fabrication of semiconductor integrated circuit device. Hitachi, Antonelli Terry Stout & Kraus, March 11, 1997: US05610089 (20 worldwide citation)

Disclosed is a semiconductor device having an internal circuit protected by an electrostatic protective circuit, the internal circuit and electrostatic protective circuit being formed on the same semiconductor substrate. The internal circuit includes MIS elements and has a double-diffused drain stru ...


4
Hidetoshi Iwai, Kazumichi Mitsusada, Masamichi Ishihara, Tetsuro Matsumoto, Kazuyuki Miyazawa, Hisao Katto, Kousuke Okuyama: Semiconductor integrated circuit device having protective/output elements and internal circuits. Hitachi, Antonelli Terry Stout & Kraus, January 4, 1994: US05276346 (19 worldwide citation)

Disclosed is a semiconductor device having an internal circuit protected by an electrostatoc protective circuit, the internal circuit and electrostatic protective circuit being formed on the same semiconductor substrate. The internal circuit includes MIS elements and has a double-diffused drain stru ...


5
Yasushi Hatta, Kazumichi Mitsusada, Hirotoshi Tanaka, Takehisa Hayashi: Semiconductor integrated circuit device having semi-insulator substrate. Hitachi, Antonelli Terry & Wands, February 7, 1989: US04803527 (15 worldwide citation)

Disclosed is a semiconductor integrated circuit device forming MESFETs by use of a semi-insulator GaAs substrate which prevents destruction of an electrostatic destruction protect circuit and a Schottky junction of an internal circuit by causing a part of electrostatic energy, which is applied to ex ...


6
Hidetoshi Iwai, Kazumichi Mitsusada, Masamichi Ishihara, Tetsuro Matsumoto, Kazuyuki Miyazawa, Hisao Katto, Kousuke Okuyama: Semiconductor integrated circuit device having output and internal circuit MISFETS. Hitachi, Antonelli Terry Stout & Kraus, July 9, 1996: US05534723 (10 worldwide citation)

Disclosed is a semiconductor device having an internal circuit protected by an electrostatic protective circuit, the internal circuit and electrostatic protective circuit being formed on the same semiconductor substrate. The internal circuit includes MIS elements and has a double-diffused drain stru ...


7
Hidetoshi Iwai, Kazumichi Mitsusada, Masamichi Ishihara, Tetsuro Matsumoto, Kazuyuki Miyazawa, Hisao Katto, Kousuke Okuyama: Semiconductor integrated circuit device having input protective elements and internal circuits. Hitachi, Antonelli Terry Stout & Kraus, July 25, 1995: US05436484 (6 worldwide citation)

Disclosed is a semiconductor device having an internal circuit protected by an electrostatic protective circuit, the internal circuit and electrostatic protective circuit being formed on the same semiconductor substrate. The internal circuit includes MIS elements and has a double-diffused drain stru ...


8
Katsumi Ogiue, Takahisa Nitta, Kazumichi Mitsusada, Masato Iwabuchi, Masanori Odaka: Method of making semiconductor integrated circuit device. Hitachi, Craig & Antonelli, August 26, 1980: US04219369 (6 worldwide citation)

The invention relates to a method of making a semiconductor integrated circuit device, and aims at diminishing the size of the isolating region which isolates the adjacent semiconductor elements from each other. The method of the invention has the steps of forming on a substrate a deposition layer o ...


9
Hidetoshi Iwai, Kazumichi Mitsusada, Masamichi Ishihara, Tetsuro Matsumoto, Kazuyuki Miyazawa, Hisao Katto, Kousuke Okuyama: Semiconductor integrated circuit device having a first MISFET of an output buffer circuit and a second MISFET of an internal circuit. Hitachi, Antonelli Terry Stout & Kraus, July 25, 1995: US05436483 (5 worldwide citation)

Disclosed is a semiconductor device having an internal circuit protected by an electrostatic protective circuit, the internal circuit and electrostatic protective circuit being formed on the same semiconductor substrate. The internal circuit includes MIS elements and has a double-diffused drain stru ...