1
Hiroichi Shinohara, Hirokazu Inoue, Yoichi Abe, Akira Kato, Hideo Suzuki, Kazuji Yamada, Masaaki Takahashi, Keiichirou Nakanishi: Capacitor-carrying semiconductor module. Hitachi, Antonelli Terry Stout & Kraus, January 5, 1993: US05177670 (160 worldwide citation)

Noise generated at high frequencies at the time of simultaneous switchings of logical circuits is reduced by lowering an inductance from LSI to a capacitor formed on a substrate. The capacitor is formed to ensure that an inductance from a bonding pad for the LSI loaded on the substrate to an electro ...


2
Isao Shimizu, Kazuji Yamada: Method of manufacturing semiconductor device having a pressure sensor. Hitachi, Antonelli Terry & Wands, October 21, 1986: US04618397 (100 worldwide citation)

The present invention relates to a semiconductor device having a semiconductor pressure sensor, which includes a heavily-doped semiconductor layer having a predetermined impurity concentration gradient and formed at the bottom of a diaphragm (membrane portion). Owing to the presence of this semicond ...


3
Akihiro Tamba, Toshio Ogawa, Kazuji Yamada: Power semiconductor module and motor drive system. Hitachi, Antonelli Terry Stout & Kraus, November 6, 2001: US06313598 (73 worldwide citation)

A power semiconductor module comprising a power semiconductor element included in a power circuit portion and mounted on a metal base, a first resin molded to the power semiconductor element, a control circuit element disposed on the first resin and included at least in a portion of the control circ ...


4
Satoshi Shimada, Kazuji Yamada, Seikou Suzuki, Motohisa Nishihara: Capacitive pressure sensor. Hitachi, Antonelli Terry & Wands, January 29, 1985: US04495820 (56 worldwide citation)

A capacitive pressure sensor and its manufacturing method are disclosed. An amplifier is formed on the main surface of a first semiconductor substrate by a diffusion process, and its surface is covered with an insulating film. An electrode is vapor-deposited on the surface of the amplifier and elect ...


5
Toshio Ogawa, Masaaki Takahashi, Masahiro Gouda, Noritaka Kamimura, Kazuhiro Suzuki, Junichi Saeki, Kazuji Yamada, Makoto Ishii, Akihiro Tamba: Semiconductor device including an integrally molded lead frame. Hitachi, Antonelli Terry Stout & Kraus, September 18, 2001: US06291880 (55 worldwide citation)

A semiconductor device includes a main circuit part having a semiconductor device formed on an electrode plate of a lead frame and a control circuit part having protective functions, which is integrally molded by a resin mold part into an integral mold structure.


6
Akihiro Tamba, Kazuji Yamada, Ruichi Saito, Tatsuya Shigemura, Yukio Sonobe, Masataka Sasaki, Kazuhiro Suzuki: Power semiconductor module employing metal based molded case and screw fastening type terminals for high reliability. Hitachi, Antonelli Terry Stout & Kraus, July 6, 1999: US05920119 (52 worldwide citation)

A power semiconductor module having a power circuit unit; a metal base for sealing the bottom of the module; an insulation substrate for electrically insulating the metal base from the power circuit unit; external input and output terminals connected to the power circuit unit; a resin case in which ...


7
Satoru Ogihara, Shunichi Numata, Kunio Miyazaki, Takashi Yokoyama, Ken Takahashi, Tasao Soga, Kazuji Yamada, Hiroichi Shinohara, Hideo Suzuki: Semiconductor chip module. Hitachi, Antonelli Terry Stout & Kraus, November 13, 1990: US04970577 (49 worldwide citation)

A semiconductor chip module includes semiconductor chips each of which has contacts on its entire front face. A multi-layered organic circuit board having a small dielectric constant is provided for mounting the semiconductor chips. Intermediate ceramic substrates having the same thermal expansion c ...


8
Tadao Kushima, Tasao Soga, Kazuji Yamada, Mitugu Shirai: Solder carrier, manufacturing method thereof and method of mounting semiconductor devices by utilizing same. Hitachi, Antonelli Terry & Wands, March 6, 1990: US04906823 (43 worldwide citation)

The invention relates to a solder carrier comprising a sheet of self-support type, made of a material which does not react to a solder when it is melted, a plurality of small through holes, and solder filling the through holes, each of the small through holes having an end, the area of which is larg ...


9
Kazuji Yamada, Seiko Suzuki, Motohisa Nishihara, Kanji Kawakami, Hideo Sato, Shigeyuki Kobori, Ryosaku Kanzawa, Minoru Takahashi, Hitoshi Minorikawa: Semiconductor absolute pressure transducer assembly and method. Hitachi, Craig & Antonelli, September 22, 1981: US04291293 (40 worldwide citation)

A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon which is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a pi ...


10
Kazuji Yamada, Akihiro Tamba, Takayoshi Nakamura, Ryuichi Saito, Toshio Ogawa, Hisanori Okamura: Liquid cooled circuit device. Hitachi, Antonelli Terry Stout & Kraus, July 15, 2003: US06594149 (39 worldwide citation)

A liquid-cooled circuit device including: a module having a circuit element and a module base plate on surface of which the circuit element is mounted; a circuit case for accommodating the module; and a cooling liquid chamber for flowing a cooling liquid in contact with a back face of the module bas ...