61
Kazuhiko Yamamoto: Supply voltage abnormal condition indicating device. Funai Electric, Lackenbach Siegel Marzullo Aronson & Greenspan, July 17, 2001: US06262590 (2 worldwide citation)

A multi-system power supply circuit for providing power supplies different in system, has signal generating circuits which correspond to the power supplies different in system, and generates repetitive frequency signals corresponding to the number of power supply systems, or indicating voltage gener ...


62
Yasuhiro Satoh, Tsukasa Nakai, Kazuhiko Yamamoto, Motoya Kishida, Hiroyuki Fukumizu, Yasuhiro Nojiri: Nonvolatile semiconductor memory device. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt L, February 19, 2013: US08378331 (2 worldwide citation)

This nonvolatile semiconductor memory device comprises a memory cell array including memory cells arranged therein. Each of the memory cells is located at respective intersections between first wirings and second wirings and includes a variable resistance element. The variable resistance element com ...


63
Yoshihiro Sato, Kazuhiko Yamamoto: Semiconductor device and manufacturing method thereof. Panasonic Corporation, McDermott Will & Emery, July 13, 2010: US07755145 (2 worldwide citation)

A semiconductor device includes an n-type MIS (Metal Insulator Semiconductor) transistor and a p-type MIS transistor. The n-type MIS transistor includes a first gate insulating film, a first fully silicided (FUSI) gate electrode formed on the first gate insulating film and made of a first metal sili ...


64
Kazumasa Shintani, Ryo Murakami, Kazuhiko Yamamoto: Process for producing alloy slab for rare-earth sintered magnet, alloy slab for rare-earth sintered magnet and rare-earth sintered magnet. Santoku Corporation, Sughrue Mion PLLC, May 25, 2010: US07722726 (1 worldwide citation)

The invention provides a method for producing alloy flakes for rare earth sintered magnets, which makes uniform the intervals, size, orientation, and shape of the R-rich region and the dendrites of the 2-14-1 phase, which inhibits formation of chill, and which produces flakes that are pulverized int ...


65
Kazumasa Shintani, Ryo Murakami, Kazuhiko Yamamoto: Process for producing alloy slab for rare-earth sintered magnet, alloy slab for rare-earth sintered magnet and rare-earth sintered magnet. Santoku Corporation, Sughrue Mion PLLC, January 31, 2012: US08105446 (1 worldwide citation)

Disclosed are a method for producing alloy flakes for rare earth sintered magnets, which makes uniform the intervals, size, orientation, and shape of the R-rich region and the dendrites of the 2-14-1 phase, and alloy flakes for a rare earth sintered magnet obtained by the method. A rare earth sinter ...


66
Yasuhiro Nojiri, Hiroyuki Fukumizu, Shinichi Nakao, Kei Watanabe, Kazuhiko Yamamoto, Ichiro Mizushima, Yoshio Ozawa: Method for manufacturing nonvolatile memory device. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt L, June 4, 2013: US08455346 (1 worldwide citation)

According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The method can include forming a first electrode film on the first interconnect. The met ...


67
Kazuhiko Yamamoto, Takuya Konno: Nonvolatile semiconductor memory device and method of manufacturing the same. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt L, October 14, 2014: US08860000 (1 worldwide citation)

A nonvolatile semiconductor memory device in accordance with an embodiment comprises a lower electrode layer, a variable resistance layer, and an upper electrode layer. The lower electrode layer is provided over a substrate. The variable resistance layer is provided on the lower electrode layer and ...


68
Kenji Aoyama, Kazuhiko Yamamoto, Satoshi Ishikawa, Shigeto Oshino: Nonvolatile memory device and method for manufacturing same. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt L, August 13, 2013: US08507888 (1 worldwide citation)

According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plural ...


69
Kazuhiko Yamamoto, Takuya Konno, Takeshi Yamaguchi: Nonvolatile memory device and method of fabricating the same. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt L, February 11, 2014: US08648323 (1 worldwide citation)

A nonvolatile memory device includes: a substrate; a first electrode formed on the substrate; a resistance change layer formed on the first electrode, the resistance change layer containing conductive nano-material; a second electrode formed on the resistance change layer; and an insulating buffer l ...


70
Kazuhiko Yamamoto, Takayuki Shibamoto, Yasuhiko Nakamura, Yasuki Mitsushima, Shigezi Sasaki: Apparatus and method for producing a thin solidified alloy. Santoku Metal Industry Company, Keil & Weinkauf, February 22, 2000: US06026995 (1 worldwide citation)

An apparatus for producing thin solidified alloy pieces having a container 53 for accommodating an alloy melt 57, the container having an opening in an upper portion of the container, drive means 2 for titling the container for providing a flow of the alloy melt from the container, control means 4 f ...